Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

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24 Citations (Scopus)


Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D 2-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3)R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001) proceeds.

Original languageEnglish
Pages (from-to)1888-1891
Number of pages4
JournalNanoscale Research Letters
Issue number12
Publication statusPublished - 2010 Dec


  • 3C-SiC(111)
  • Epitaxy
  • Graphene
  • Si(111)
  • Surface termination


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