TY - GEN
T1 - Surface contamination effects on bonding performance in atomic diffusion bonding of wafers using amorphous Si thin films
AU - Amino, T.
AU - Uomoto, M.
AU - Shimatsu, T.
N1 - Publisher Copyright:
© 2021 IEEE
PY - 2021/10/5
Y1 - 2021/10/5
N2 - Room-temperature bonding using 20-nm thick amorphous Si films was studied as a function of waiting time tw in vacuum of 1.0 × 10-6 Pa between film deposition and bonding. Bonding strength decreased suddenly at tw greater than 3.6 × 103 s, which differed from behavior observed using Ti films.
AB - Room-temperature bonding using 20-nm thick amorphous Si films was studied as a function of waiting time tw in vacuum of 1.0 × 10-6 Pa between film deposition and bonding. Bonding strength decreased suddenly at tw greater than 3.6 × 103 s, which differed from behavior observed using Ti films.
UR - http://www.scopus.com/inward/record.url?scp=85120421572&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85120421572&partnerID=8YFLogxK
U2 - 10.1109/LTB-3D53950.2021.9598433
DO - 10.1109/LTB-3D53950.2021.9598433
M3 - Conference contribution
AN - SCOPUS:85120421572
T3 - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
SP - 40
BT - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Y2 - 5 October 2021 through 11 October 2021
ER -