TY - JOUR
T1 - Surface dynamics on a high-temperature Si surface under a high-pressure reactive gas atmosphere studied by time-resolved UPS
AU - Takakuwa, Yuji
PY - 1999
Y1 - 1999
N2 - The surface dynamics on a high-temperature Si surface under a reactive gas atmosphere have been investigated by time-resolved ultraviolet photoelectron spectroscopy (UPS). In this paper, after describing the key points in the surface dynamics study and the details of the time-resolved UPS method, we review the surface dynamics of gas source molecular beam epitaxy (GSMBE) with Si2H6, etching with Cl and oxidation with O2 on the Si(001) surface. The oscillatory behavior of the surface state photoelectron intensity was found to appear during GSMBE, making it possible to measure in real time the Si growth rate. Using Si(001) wafers with two different miscut angles of 0.05° and 4.00°, it was confirmed that the Si adatoms (ad-Si) released from step edges play an important role in etching [ad-Si+Cl→SiCl (desorption species)], thermal oxidation [ad-Si+O2→SiO2 (two-dimensional island growth)], and decomposition [SiO2 + ad-Si-→2SiO (desorption species)].
AB - The surface dynamics on a high-temperature Si surface under a reactive gas atmosphere have been investigated by time-resolved ultraviolet photoelectron spectroscopy (UPS). In this paper, after describing the key points in the surface dynamics study and the details of the time-resolved UPS method, we review the surface dynamics of gas source molecular beam epitaxy (GSMBE) with Si2H6, etching with Cl and oxidation with O2 on the Si(001) surface. The oscillatory behavior of the surface state photoelectron intensity was found to appear during GSMBE, making it possible to measure in real time the Si growth rate. Using Si(001) wafers with two different miscut angles of 0.05° and 4.00°, it was confirmed that the Si adatoms (ad-Si) released from step edges play an important role in etching [ad-Si+Cl→SiCl (desorption species)], thermal oxidation [ad-Si+O2→SiO2 (two-dimensional island growth)], and decomposition [SiO2 + ad-Si-→2SiO (desorption species)].
KW - Etching
KW - Gas source molecular beam epitaxy
KW - In situ observation
KW - Oxidation
KW - Si adatom
KW - Si gas-phase process
KW - Surface dynamics
KW - Time-resolved ultraviolet photoelectron spectroscopy
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U2 - 10.1016/s0368-2048(98)00448-4
DO - 10.1016/s0368-2048(98)00448-4
M3 - Article
AN - SCOPUS:0001821187
SN - 0368-2048
VL - 101-103
SP - 211
EP - 221
JO - Journal of Electron Spectroscopy and Related Phenomena
JF - Journal of Electron Spectroscopy and Related Phenomena
ER -