Surface electrical breakdown with white-light emission on semi-insulating GaAs substrates

H. Hasegawa; T. Kitagawa; T. Sawada; H. Ohno

doi:10.1049/el:19840389

Surface electrical breakdown with white-light emission on semi-insulating GaAs substrates

H. Hasegawa, T. Kitagawa, T. Sawada, H. Ohno

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Electrical breakdown on surface passivated semi-insulating GaAs substrates is shown to be accompanied with whitelight emission from ohmic electrode edges. It cannot be explained by the previous space-charge-limited current model. A new model is proposed in which filling of states near the surface produces an intense electric field near the anode edge and triggers an avalanche.

Original language	English
Pages (from-to)	561-562
Number of pages	2
Journal	Electronics Letters
Volume	20
Issue number	13
DOIs	https://doi.org/10.1049/el:19840389
Publication status	Published - 1984 Jun 21
Externally published	Yes

Keywords

Gallium arsenide
Integrated circuits
Light emission
Semi-insulating substrate

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19840389

Cite this

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title = "Surface electrical breakdown with white-light emission on semi-insulating GaAs substrates",

abstract = "Electrical breakdown on surface passivated semi-insulating GaAs substrates is shown to be accompanied with whitelight emission from ohmic electrode edges. It cannot be explained by the previous space-charge-limited current model. A new model is proposed in which filling of states near the surface produces an intense electric field near the anode edge and triggers an avalanche.",

keywords = "Gallium arsenide, Integrated circuits, Light emission, Semi-insulating substrate",

author = "H. Hasegawa and T. Kitagawa and T. Sawada and H. Ohno",

year = "1984",

month = jun,

day = "21",

doi = "10.1049/el:19840389",

language = "English",

volume = "20",

pages = "561--562",

journal = "Electronics Letters",

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T1 - Surface electrical breakdown with white-light emission on semi-insulating GaAs substrates

AU - Hasegawa, H.

AU - Kitagawa, T.

AU - Sawada, T.

AU - Ohno, H.

PY - 1984/6/21

Y1 - 1984/6/21

N2 - Electrical breakdown on surface passivated semi-insulating GaAs substrates is shown to be accompanied with whitelight emission from ohmic electrode edges. It cannot be explained by the previous space-charge-limited current model. A new model is proposed in which filling of states near the surface produces an intense electric field near the anode edge and triggers an avalanche.

AB - Electrical breakdown on surface passivated semi-insulating GaAs substrates is shown to be accompanied with whitelight emission from ohmic electrode edges. It cannot be explained by the previous space-charge-limited current model. A new model is proposed in which filling of states near the surface produces an intense electric field near the anode edge and triggers an avalanche.

KW - Gallium arsenide

KW - Integrated circuits

KW - Light emission

KW - Semi-insulating substrate

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DO - 10.1049/el:19840389

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EP - 562

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Surface electrical breakdown with white-light emission on semi-insulating GaAs substrates

Abstract

Keywords

ASJC Scopus subject areas

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