TY - JOUR
T1 - Surface electron-ion mixed conduction of BaTiO3−δ thin film with oxygen vacancies
AU - Takada, Tomoasa
AU - Fujita, Takeshi
AU - Imagawa, Takehiro
AU - Yamamoto, Emi
AU - Kano, Jun
AU - Shiga, Daisuke
AU - Horiba, Koji
AU - Kumigashira, Hiroshi
AU - Higuchi, Tohru
N1 - Funding Information:
Acknowledgements We would like to thank Ms. Eiko Sunazuka and Mr. Ryugo Sunazuka for their technical support. This work was supported by a Grant-in-Aid for Scientific Research (Grant No. 16H02115) from the Japan Society for the Promotion of Science and the MEXT Element Strategy Initiative to Form Core Research Center. The work at KEK was done under the approval of the Program Advisory Committee (Proposal Nos. 2018S2-004 and 2018G009) at the Institute of Materials Structure Science, KEK.
Funding Information:
We would like to thank Ms. Eiko Sunazuka and Mr. Ryugo Sunazuka for their technical support. This work was supported by a Grant-in-Aid for Scientific Research (Grant No. 16H02115) from the Japan Society for the Promotion of Science and the MEXT Element Strategy Initiative to Form Core Research Center. The work at KEK was done under the approval of the Program Advisory Committee (Proposal Nos. 2018S2-004 and 2018G009) at the Institute of Materials Structure Science, KEK.
Publisher Copyright:
© 2021 The Physical Society of Japan
PY - 2021/1/15
Y1 - 2021/1/15
N2 - A BaTiO3−δ thin film with oxygen vacancies was prepared on a Pt=Al2O3 (0001) substrate by RF magnetron sputtering. The prepared thin film was preferentially grown in the [111] direction. The BaTiO3−δ thin film with a reduced interplanar distance (d111) exhibited the Ti3+ valence state of 4.4%, which is closely related to concentration of oxygen vacancies. The activation energy estimated from the Arrhenius plot of the electrical conductivity was approximately 61 meV. The electrical conductivity of ∼10−5 S=cm at room temperature did not depend on the oxygen gas partial pressure. The photoemission spectra exhibited the O-H bond peak and donor state near the Fermi level. These results indicate that the BaTiO3−δ=Pt=Al2O3 (0001) thin film has surface electron-proton mixed conduction at room temperature.
AB - A BaTiO3−δ thin film with oxygen vacancies was prepared on a Pt=Al2O3 (0001) substrate by RF magnetron sputtering. The prepared thin film was preferentially grown in the [111] direction. The BaTiO3−δ thin film with a reduced interplanar distance (d111) exhibited the Ti3+ valence state of 4.4%, which is closely related to concentration of oxygen vacancies. The activation energy estimated from the Arrhenius plot of the electrical conductivity was approximately 61 meV. The electrical conductivity of ∼10−5 S=cm at room temperature did not depend on the oxygen gas partial pressure. The photoemission spectra exhibited the O-H bond peak and donor state near the Fermi level. These results indicate that the BaTiO3−δ=Pt=Al2O3 (0001) thin film has surface electron-proton mixed conduction at room temperature.
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U2 - 10.7566/JPSJ.90.014707
DO - 10.7566/JPSJ.90.014707
M3 - Article
AN - SCOPUS:85098652432
SN - 0031-9015
VL - 90
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
IS - 1
M1 - 014707
ER -