Surface electronic structure of a single-domain Si(111)4 × 1-In surface: a synchrotron radiation photoemission study

T. Abukawa; M. Sasaki; F. Hisamatsu; T. Goto; T. Kinoshita; A. Kakizaki; S. Kono

doi:10.1016/0039-6028(94)00693-8

Surface electronic structure of a single-domain Si(111)4 × 1-In surface: a synchrotron radiation photoemission study

T. Abukawa, M. Sasaki, F. Hisamatsu, T. Goto, T. Kinoshita, A. Kakizaki, S. Kono

SR Core Research Division

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Abstract

The electronic structure of a Si(111)4 × 1-In surface has been studied by angle-resolved photoelectron spectroscopy (ARPES). Using a 1.1° off-axis Si(111) wafer as substrate, a single-domain Si(111)4 × 1-In surface has been prepared in order to determine the dispersion of surface state (SS) without the obscurity arising from multi-oriented 4 × 1 domains. Three SSs that cross the Fermi level have been found. Thus, the Si(111)4 × 1-In surface is concluded to be metallic. The dispersions of the metallic SS appeared to be almost one-dimensional, suggesting one-dimensional metallic bonds among In atoms. Completely occupied SSs have been also found. The characteristics of SSs are discussed in relation to the existing structural models for the Si(111)4 × 1-In surface.

Original language	English
Pages (from-to)	33-44
Number of pages	12
Journal	Surface Science
Volume	325
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(94)00693-8
Publication status	Published - 1995 Feb 20

Keywords

Angle-resolved photoemission
Indium
Metal-semiconductor non-magnetic thin film structures
Metallic films
Silicon
Surface electronic phenomena
Vicinal single-crystal surfaces

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(94)00693-8

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title = "Surface electronic structure of a single-domain Si(111)4 × 1-In surface: a synchrotron radiation photoemission study",

abstract = "The electronic structure of a Si(111)4 × 1-In surface has been studied by angle-resolved photoelectron spectroscopy (ARPES). Using a 1.1° off-axis Si(111) wafer as substrate, a single-domain Si(111)4 × 1-In surface has been prepared in order to determine the dispersion of surface state (SS) without the obscurity arising from multi-oriented 4 × 1 domains. Three SSs that cross the Fermi level have been found. Thus, the Si(111)4 × 1-In surface is concluded to be metallic. The dispersions of the metallic SS appeared to be almost one-dimensional, suggesting one-dimensional metallic bonds among In atoms. Completely occupied SSs have been also found. The characteristics of SSs are discussed in relation to the existing structural models for the Si(111)4 × 1-In surface.",

keywords = "Angle-resolved photoemission, Indium, Metal-semiconductor non-magnetic thin film structures, Metallic films, Silicon, Surface electronic phenomena, Vicinal single-crystal surfaces",

author = "T. Abukawa and M. Sasaki and F. Hisamatsu and T. Goto and T. Kinoshita and A. Kakizaki and S. Kono",

year = "1995",

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doi = "10.1016/0039-6028(94)00693-8",

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T1 - Surface electronic structure of a single-domain Si(111)4 × 1-In surface

T2 - a synchrotron radiation photoemission study

AU - Abukawa, T.

AU - Sasaki, M.

AU - Hisamatsu, F.

AU - Goto, T.

AU - Kinoshita, T.

AU - Kakizaki, A.

AU - Kono, S.

PY - 1995/2/20

Y1 - 1995/2/20

N2 - The electronic structure of a Si(111)4 × 1-In surface has been studied by angle-resolved photoelectron spectroscopy (ARPES). Using a 1.1° off-axis Si(111) wafer as substrate, a single-domain Si(111)4 × 1-In surface has been prepared in order to determine the dispersion of surface state (SS) without the obscurity arising from multi-oriented 4 × 1 domains. Three SSs that cross the Fermi level have been found. Thus, the Si(111)4 × 1-In surface is concluded to be metallic. The dispersions of the metallic SS appeared to be almost one-dimensional, suggesting one-dimensional metallic bonds among In atoms. Completely occupied SSs have been also found. The characteristics of SSs are discussed in relation to the existing structural models for the Si(111)4 × 1-In surface.

AB - The electronic structure of a Si(111)4 × 1-In surface has been studied by angle-resolved photoelectron spectroscopy (ARPES). Using a 1.1° off-axis Si(111) wafer as substrate, a single-domain Si(111)4 × 1-In surface has been prepared in order to determine the dispersion of surface state (SS) without the obscurity arising from multi-oriented 4 × 1 domains. Three SSs that cross the Fermi level have been found. Thus, the Si(111)4 × 1-In surface is concluded to be metallic. The dispersions of the metallic SS appeared to be almost one-dimensional, suggesting one-dimensional metallic bonds among In atoms. Completely occupied SSs have been also found. The characteristics of SSs are discussed in relation to the existing structural models for the Si(111)4 × 1-In surface.

KW - Angle-resolved photoemission

KW - Indium

KW - Metal-semiconductor non-magnetic thin film structures

KW - Metallic films

KW - Silicon

KW - Surface electronic phenomena

KW - Vicinal single-crystal surfaces

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DO - 10.1016/0039-6028(94)00693-8

M3 - Article

AN - SCOPUS:0029247250

SN - 0039-6028

VL - 325

SP - 33

EP - 44

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Surface electronic structure of a single-domain Si(111)4 × 1-In surface: a synchrotron radiation photoemission study

Abstract

Keywords

ASJC Scopus subject areas

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