TY - JOUR
T1 - Surface electron–ion mixed conduction of Ti0.99Sc0.01O2−δ thin film with lattice distortion and oxygen vacancies
AU - Kawamura, Kinya
AU - Sekine, Masaki
AU - Nishioka, Daiki
AU - Yukawa, Ryu
AU - Horiba, Koji
AU - Kumigashira, Hiroshi
AU - Higuchi, Tohru
N1 - Funding Information:
Acknowledgements This work was supported by a Grant-in-Aid for Scientific Research (Grant No. 16H02115) from the Japan Society for the Promotion of Science and the MEXT Element Strategy Initiative to Form Core Research Center. The work at KEK was done under the approval of the Program Advisory Committee (Proposal Nos. 2018S2-004 and 2018G009) at the Institute of Materials Structure Science, KEK.
Publisher Copyright:
©2019 The Physical Society of Japan
PY - 2019
Y1 - 2019
N2 - We investigated the structural and electrical properties of a-axis-oriented Sc3+-doped TiO2 (Ti0.99Sc0.01O2−δ) thin film with rutile structure prepared by RF magnetron sputtering. The prepared thin film had smaller lattice constant than that of the bulk crystal due to the stress from the substrate and a lot of oxygen vacancies. The Ti 2p photoemission (PES) spectrum exhibited the mixed valence states of Ti4+ and Ti3+. The electrical conductivity in in-plane exhibited the semiconducting-like behavior with the activation energy of ∼100 meV and electron–ion mixed conduction was obtained by oxygen partial pressure (PO2) dependence of the electrical conductivity at room temperature (R.T.). The existence of OH− peak was also observed in the O 1s PES spectrum. These results indicate that the a-axis-oriented Ti0.99Sc0.01O2−δ thin film has the electron–proton mixed conduction on the surface at R.T.
AB - We investigated the structural and electrical properties of a-axis-oriented Sc3+-doped TiO2 (Ti0.99Sc0.01O2−δ) thin film with rutile structure prepared by RF magnetron sputtering. The prepared thin film had smaller lattice constant than that of the bulk crystal due to the stress from the substrate and a lot of oxygen vacancies. The Ti 2p photoemission (PES) spectrum exhibited the mixed valence states of Ti4+ and Ti3+. The electrical conductivity in in-plane exhibited the semiconducting-like behavior with the activation energy of ∼100 meV and electron–ion mixed conduction was obtained by oxygen partial pressure (PO2) dependence of the electrical conductivity at room temperature (R.T.). The existence of OH− peak was also observed in the O 1s PES spectrum. These results indicate that the a-axis-oriented Ti0.99Sc0.01O2−δ thin film has the electron–proton mixed conduction on the surface at R.T.
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U2 - 10.7566/JPSJ.88.054711
DO - 10.7566/JPSJ.88.054711
M3 - Article
AN - SCOPUS:85067240270
SN - 0031-9015
VL - 88
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
IS - 5
M1 - 054711
ER -