Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy

Huaizhe Xu; K. Ohtani; M. Yamao; H. Ohno

doi:10.1063/1.2337541

Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy

Huaizhe Xu, K. Ohtani, M. Yamao, H. Ohno

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Abstract

Homoepitaxial ZnO layers are grown on Zn-polar (0001) and O-polar (0001) surfaces of single crystal ZnO substrates by plasma assisted molecular beam epitaxy. It is found that the growth conditions to obtain smooth surfaces are significantly different for the two surface polarities. For growth on Zn-polar surface, moderate temperature (650°C) and highly O-rich condition (low Zn/O₂) are required, while high temperature (1000-1050°C) and Zn-rich condition (high Zn/O₂ ratio) are essential for growth on O-polar surfaces.

Original language	English
Article number	071918
Journal	Applied Physics Letters
Volume	89
Issue number	7
DOIs	https://doi.org/10.1063/1.2337541
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2337541

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title = "Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy",

abstract = "Homoepitaxial ZnO layers are grown on Zn-polar (0001) and O-polar (0001) surfaces of single crystal ZnO substrates by plasma assisted molecular beam epitaxy. It is found that the growth conditions to obtain smooth surfaces are significantly different for the two surface polarities. For growth on Zn-polar surface, moderate temperature (650°C) and highly O-rich condition (low Zn/O2) are required, while high temperature (1000-1050°C) and Zn-rich condition (high Zn/O2 ratio) are essential for growth on O-polar surfaces.",

author = "Huaizhe Xu and K. Ohtani and M. Yamao and H. Ohno",

note = "Funding Information: This work is partly supported by the IT Program of Research Revolution 2002 (RR2002) from MEXT and a Grant-in-Aid from MEXT. ",

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volume = "89",

journal = "Applied Physics Letters",

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T1 - Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy

AU - Xu, Huaizhe

AU - Ohtani, K.

AU - Yamao, M.

AU - Ohno, H.

N1 - Funding Information: This work is partly supported by the IT Program of Research Revolution 2002 (RR2002) from MEXT and a Grant-in-Aid from MEXT.

PY - 2006

Y1 - 2006

N2 - Homoepitaxial ZnO layers are grown on Zn-polar (0001) and O-polar (0001) surfaces of single crystal ZnO substrates by plasma assisted molecular beam epitaxy. It is found that the growth conditions to obtain smooth surfaces are significantly different for the two surface polarities. For growth on Zn-polar surface, moderate temperature (650°C) and highly O-rich condition (low Zn/O2) are required, while high temperature (1000-1050°C) and Zn-rich condition (high Zn/O2 ratio) are essential for growth on O-polar surfaces.

AB - Homoepitaxial ZnO layers are grown on Zn-polar (0001) and O-polar (0001) surfaces of single crystal ZnO substrates by plasma assisted molecular beam epitaxy. It is found that the growth conditions to obtain smooth surfaces are significantly different for the two surface polarities. For growth on Zn-polar surface, moderate temperature (650°C) and highly O-rich condition (low Zn/O2) are required, while high temperature (1000-1050°C) and Zn-rich condition (high Zn/O2 ratio) are essential for growth on O-polar surfaces.

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Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy

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