@article{6615d55855a14ff99338fea1adf2cdd7,
title = "Surface oxidation of electromagnetically levitated molten silicon under a condition of oxygen-supersaturation",
abstract = "Surface oxidation of a molten silicon droplet levitated under undercooled and oxygen-supersaturated conditions was observed. After the melt surface was covered with a SiO2 film, temperature fluctuation took place; this mainly corresponds to two competing phenomena, i.e. the exothermic reaction of SiO2 formation and the endothermic reaction of SiO evaporation, which enhances the undercooling.",
keywords = "Elemental semiconductors, Image analysis, Solidification, Thermodynamics, Undercooling",
author = "Taketoshi Hibiya and Satoshi Hokama and Yusuke Koike and Masaki Rinno and Hiroshi Kawamura and Hiroyuki Fukuyama and Kensuke Higuchi and Masahito Watanabe",
note = "Funding Information: Part of the present research was supported by the Japan Aerospace Exploration Agency through the Japan Space Forum. The authors thank Mr. H. Yamada of Institute of Multidisciplinary Research, for Advanced Materials (IMRAM) at Tohoku University for preparing a glass tube to control the oxygen partial pressure of the ambient atmosphere for the silicon droplet.",
year = "2006",
month = feb,
doi = "10.1016/j.scriptamat.2005.07.043",
language = "English",
volume = "54",
pages = "695--699",
journal = "Scripta Materialia",
issn = "1359-6462",
publisher = "Elsevier Ltd.",
number = "4 SPEC. ISS.",
}