Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1-xGex epitaxial films

Hang Sup Cho; Masao Sakuraba; Junichi Murota

doi:10.1016/j.tsf.2005.06.116

Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si_1-xGe_x epitaxial films

Hang Sup Cho, Masao Sakuraba, Junichi Murota

RIEC - Computing System Platforms Division

Tohoku University

Research output: Contribution to journal › Article › peer-review

Abstract

The dry etching characteristics of B-doped Si_1-xGe_x epitaxial films have been investigated using an electron-cyclotron-resonance chlorine plasma. The etch rate of Si_1-xGe_x films increases with increasing Ge fraction and decreases with B doping. In particular, for the chlorine radical-dominant etching, the etch rate of B-doped films decreases with increasing etching time. The phenomena are caused by the segregation of B atoms on the etched surface. The segregated B atom concentration for B-doped Ge film is larger than that for B-doped Si film. It is also suggested that the decrease of B atom concentration when increasing the etching time for the Si_1-xGe_x films is caused by the segregation of Si atoms on the etched surface.

Original language	English
Pages (from-to)	301-304
Number of pages	4
Journal	Thin Solid Films
Volume	508
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.06.116
Publication status	Published - 2006 Jun 5

Keywords

B-doped SiGe
Electron-cyclotron-resonance chlorine plasma
Plasma etching
Radical dominant etching
Segregation

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10.1016/j.tsf.2005.06.116

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@article{79c1c816a34d4278a74ea323f576dcc3,

title = "Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1-xGex epitaxial films",

abstract = "The dry etching characteristics of B-doped Si1-xGex epitaxial films have been investigated using an electron-cyclotron-resonance chlorine plasma. The etch rate of Si1-xGex films increases with increasing Ge fraction and decreases with B doping. In particular, for the chlorine radical-dominant etching, the etch rate of B-doped films decreases with increasing etching time. The phenomena are caused by the segregation of B atoms on the etched surface. The segregated B atom concentration for B-doped Ge film is larger than that for B-doped Si film. It is also suggested that the decrease of B atom concentration when increasing the etching time for the Si1-xGex films is caused by the segregation of Si atoms on the etched surface.",

keywords = "B-doped SiGe, Electron-cyclotron-resonance chlorine plasma, Plasma etching, Radical dominant etching, Segregation",

author = "Cho, {Hang Sup} and Masao Sakuraba and Junichi Murota",

note = "Funding Information: This study was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

year = "2006",

month = jun,

day = "5",

doi = "10.1016/j.tsf.2005.06.116",

language = "English",

volume = "508",

pages = "301--304",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1-xGex epitaxial films

AU - Cho, Hang Sup

AU - Sakuraba, Masao

AU - Murota, Junichi

N1 - Funding Information: This study was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2006/6/5

Y1 - 2006/6/5

N2 - The dry etching characteristics of B-doped Si1-xGex epitaxial films have been investigated using an electron-cyclotron-resonance chlorine plasma. The etch rate of Si1-xGex films increases with increasing Ge fraction and decreases with B doping. In particular, for the chlorine radical-dominant etching, the etch rate of B-doped films decreases with increasing etching time. The phenomena are caused by the segregation of B atoms on the etched surface. The segregated B atom concentration for B-doped Ge film is larger than that for B-doped Si film. It is also suggested that the decrease of B atom concentration when increasing the etching time for the Si1-xGex films is caused by the segregation of Si atoms on the etched surface.

AB - The dry etching characteristics of B-doped Si1-xGex epitaxial films have been investigated using an electron-cyclotron-resonance chlorine plasma. The etch rate of Si1-xGex films increases with increasing Ge fraction and decreases with B doping. In particular, for the chlorine radical-dominant etching, the etch rate of B-doped films decreases with increasing etching time. The phenomena are caused by the segregation of B atoms on the etched surface. The segregated B atom concentration for B-doped Ge film is larger than that for B-doped Si film. It is also suggested that the decrease of B atom concentration when increasing the etching time for the Si1-xGex films is caused by the segregation of Si atoms on the etched surface.

KW - B-doped SiGe

KW - Electron-cyclotron-resonance chlorine plasma

KW - Plasma etching

KW - Radical dominant etching

KW - Segregation

UR - http://www.scopus.com/inward/record.url?scp=33646115197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646115197&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.06.116

DO - 10.1016/j.tsf.2005.06.116

M3 - Article

AN - SCOPUS:33646115197

SN - 0040-6090

VL - 508

SP - 301

EP - 304

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si_1-xGe_x epitaxial films

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Keywords

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