Surface reaction of alternately supplied WF6 and SiH4 gases

Yuji Yamamoto; Takashi Matsuura; Junichi Murota

doi:10.1016/S0039-6028(98)00225-8

Surface reaction of alternately supplied WF₆ and SiH₄ gases

Yuji Yamamoto, Takashi Matsuura, Junichi Murota

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The surface reaction of WF₆ and SiH₄ gases at ∼100°C was investigated using an ultraclean cold-wall LPCVD system with analysis by XPS and FT-IR. By supplying only WF₆ onto the hydrogen-desorbed Si(100) surface, which was prepared by preheating in Ar, dissociative adsorption of WF₆ occurred generating WF_x and Si-F was formed on the Si surface. On the HF-treated Si-dihydride surface, however, very little adsorption of WF₆ was observed. This means that adsorption of WF₆ is enhanced by hydrogen desorption on the Si surface. Based on the results on the alternate WF₆ and SiH₄ supply experiments, it is proposed that SiH₄ adsorbs on the WF_x-adsorbed surface receiving F from WF_x to become an Si-containing species, and further WF₆ supply causes WF_x adsorption accompanied with desorption of the Si-containing species.

Original language	English
Pages (from-to)	190-194
Number of pages	5
Journal	Surface Science
Volume	408
Issue number	1-3
DOIs	https://doi.org/10.1016/S0039-6028(98)00225-8
Publication status	Published - 1998 Jun 15
Externally published	Yes

Keywords

Chemical vapor deposition (CVD)
SiH
Surface reaction
W
WF

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/S0039-6028(98)00225-8

Cite this

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title = "Surface reaction of alternately supplied WF6 and SiH4 gases",

abstract = "The surface reaction of WF6 and SiH4 gases at ∼100°C was investigated using an ultraclean cold-wall LPCVD system with analysis by XPS and FT-IR. By supplying only WF6 onto the hydrogen-desorbed Si(100) surface, which was prepared by preheating in Ar, dissociative adsorption of WF6 occurred generating WFx and Si-F was formed on the Si surface. On the HF-treated Si-dihydride surface, however, very little adsorption of WF6 was observed. This means that adsorption of WF6 is enhanced by hydrogen desorption on the Si surface. Based on the results on the alternate WF6 and SiH4 supply experiments, it is proposed that SiH4 adsorbs on the WFx-adsorbed surface receiving F from WFx to become an Si-containing species, and further WF6 supply causes WFx adsorption accompanied with desorption of the Si-containing species.",

keywords = "Chemical vapor deposition (CVD), SiH, Surface reaction, W, WF",

author = "Yuji Yamamoto and Takashi Matsuura and Junichi Murota",

note = "Funding Information: The authors wish to express their thanks to Dr. Masao Sakuraba for his advice and encouragement in executing this study. The CVD reactor was provided by Kokusai Electric Co., Ltd., and WF 6 by Morita Chemical Industries Co., Ltd. This study was carried out in the Superclean Room of the Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, and was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture of Japan, and Research for the Future Program (No. JSPS-RFTF96R13101) from the Japan Society for Promotion of Science.",

year = "1998",

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doi = "10.1016/S0039-6028(98)00225-8",

language = "English",

volume = "408",

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journal = "Surface Science",

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T1 - Surface reaction of alternately supplied WF6 and SiH4 gases

AU - Yamamoto, Yuji

AU - Matsuura, Takashi

AU - Murota, Junichi

N1 - Funding Information: The authors wish to express their thanks to Dr. Masao Sakuraba for his advice and encouragement in executing this study. The CVD reactor was provided by Kokusai Electric Co., Ltd., and WF 6 by Morita Chemical Industries Co., Ltd. This study was carried out in the Superclean Room of the Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, and was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture of Japan, and Research for the Future Program (No. JSPS-RFTF96R13101) from the Japan Society for Promotion of Science.

PY - 1998/6/15

Y1 - 1998/6/15

N2 - The surface reaction of WF6 and SiH4 gases at ∼100°C was investigated using an ultraclean cold-wall LPCVD system with analysis by XPS and FT-IR. By supplying only WF6 onto the hydrogen-desorbed Si(100) surface, which was prepared by preheating in Ar, dissociative adsorption of WF6 occurred generating WFx and Si-F was formed on the Si surface. On the HF-treated Si-dihydride surface, however, very little adsorption of WF6 was observed. This means that adsorption of WF6 is enhanced by hydrogen desorption on the Si surface. Based on the results on the alternate WF6 and SiH4 supply experiments, it is proposed that SiH4 adsorbs on the WFx-adsorbed surface receiving F from WFx to become an Si-containing species, and further WF6 supply causes WFx adsorption accompanied with desorption of the Si-containing species.

AB - The surface reaction of WF6 and SiH4 gases at ∼100°C was investigated using an ultraclean cold-wall LPCVD system with analysis by XPS and FT-IR. By supplying only WF6 onto the hydrogen-desorbed Si(100) surface, which was prepared by preheating in Ar, dissociative adsorption of WF6 occurred generating WFx and Si-F was formed on the Si surface. On the HF-treated Si-dihydride surface, however, very little adsorption of WF6 was observed. This means that adsorption of WF6 is enhanced by hydrogen desorption on the Si surface. Based on the results on the alternate WF6 and SiH4 supply experiments, it is proposed that SiH4 adsorbs on the WFx-adsorbed surface receiving F from WFx to become an Si-containing species, and further WF6 supply causes WFx adsorption accompanied with desorption of the Si-containing species.

KW - Chemical vapor deposition (CVD)

KW - SiH

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