Surface reaction of CH3SiH3 on the Ge(100) and Si(100) surfaces was investigated in the low-temperature region of 400-500 °C using ultraclean hot-wall low-pressure chemical vapor deposition (CVD) systems, where CH3SiH3 was supplied at a partial pressure of 18 Pa for 0-240 min. On Ge(100), the concentrations of Si and C deposited at 400 °C and 450 °C saturate to the value corresponding to the single atomic layer, but those at 500 °C increase continuously with exposure time. Nevertheless, at all the temperatures studied, the concentration of deposited Si is nearly the same as that of deposited C. In the case of SiH4 exposure at 450 °C at partial pressures of 6 and 60 Pa, it was found that the Ge atoms segregate on the top surface at the early stage of Si deposition. By comparing these results, it is considered that the adsorption of CH3SiH3 suppresses the Ge segregation. On Si(100), the C deposition by CH3SiH3 has a similar tendency to that on Ge(100), but the initial deposition efficiency is lower than that on Ge(100). Moreover, the FTIR/RAS Si-hydride peak shifts to the lower wave numbers after CH3SiH3 exposure. These results suggest that CH3SiH3 is adsorbed without breaking the Si-C bond on Ge(100) and Si(100) at 400-500 °C.
|Number of pages||5|
|Journal||Applied Surface Science|
|Publication status||Published - 2000 Aug 1|
|Event||5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France|
Duration: 1999 Jul 6 → 1999 Jul 9