Surface stress in thin oxide layer made by plasma oxidation with applying positive bias

A. N. Itakura; T. Narushima; M. Kitajima; K. Teraishi; A. Yamada; A. Miyamoto

doi:10.1016/S0169-4332(00)00055-6

Surface stress in thin oxide layer made by plasma oxidation with applying positive bias

A. N. Itakura, T. Narushima, M. Kitajima, K. Teraishi, A. Yamada, A. Miyamoto

Research output: Contribution to journal › Conference article › peer-review

21 Citations (Scopus)

Abstract

The time evolution of the surface stress during plasma oxidation of Si(100) at a very early stage (oxide thickness <5 nm) has been studied, using a Si micromechanical cantilever. The effect of positive bias voltage applied to samples was examined. Three different stages of stress evolution are observed during the first 1000 s. The initial compressive stress is found to be caused by excess electron influx onto the sample surface from the plasma. The following tensile and compressive stresses can be explained in terms of the oxide structure.

Original language	English
Pages (from-to)	62-66
Number of pages	5
Journal	Applied Surface Science
Volume	159
DOIs	https://doi.org/10.1016/S0169-4332(00)00055-6
Publication status	Published - 2000 Jun
Externally published	Yes
Event	3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn Duration: 1999 Oct 25 → 1999 Oct 29

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(00)00055-6

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title = "Surface stress in thin oxide layer made by plasma oxidation with applying positive bias",

abstract = "The time evolution of the surface stress during plasma oxidation of Si(100) at a very early stage (oxide thickness <5 nm) has been studied, using a Si micromechanical cantilever. The effect of positive bias voltage applied to samples was examined. Three different stages of stress evolution are observed during the first 1000 s. The initial compressive stress is found to be caused by excess electron influx onto the sample surface from the plasma. The following tensile and compressive stresses can be explained in terms of the oxide structure.",

author = "Itakura, {A. N.} and T. Narushima and M. Kitajima and K. Teraishi and A. Yamada and A. Miyamoto",

year = "2000",

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pages = "62--66",

journal = "Applied Surface Science",

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note = "3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) ; Conference date: 25-10-1999 Through 29-10-1999",

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T1 - Surface stress in thin oxide layer made by plasma oxidation with applying positive bias

AU - Itakura, A. N.

AU - Narushima, T.

AU - Kitajima, M.

AU - Teraishi, K.

AU - Yamada, A.

AU - Miyamoto, A.

PY - 2000/6

Y1 - 2000/6

N2 - The time evolution of the surface stress during plasma oxidation of Si(100) at a very early stage (oxide thickness <5 nm) has been studied, using a Si micromechanical cantilever. The effect of positive bias voltage applied to samples was examined. Three different stages of stress evolution are observed during the first 1000 s. The initial compressive stress is found to be caused by excess electron influx onto the sample surface from the plasma. The following tensile and compressive stresses can be explained in terms of the oxide structure.

AB - The time evolution of the surface stress during plasma oxidation of Si(100) at a very early stage (oxide thickness <5 nm) has been studied, using a Si micromechanical cantilever. The effect of positive bias voltage applied to samples was examined. Three different stages of stress evolution are observed during the first 1000 s. The initial compressive stress is found to be caused by excess electron influx onto the sample surface from the plasma. The following tensile and compressive stresses can be explained in terms of the oxide structure.

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U2 - 10.1016/S0169-4332(00)00055-6

DO - 10.1016/S0169-4332(00)00055-6

M3 - Conference article

AN - SCOPUS:0034204826

SN - 0169-4332

VL - 159

SP - 62

EP - 66

JO - Applied Surface Science

JF - Applied Surface Science

T2 - 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3)

Y2 - 25 October 1999 through 29 October 1999

ER -

Surface stress in thin oxide layer made by plasma oxidation with applying positive bias

Abstract

ASJC Scopus subject areas

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