Surface structure and oxidation of Si(001)‒Bi

T. Hanada; M. Kawai

doi:10.1016/0042-207X(90)90444-4

Surface structure and oxidation of Si(001)‒Bi

T. Hanada, M. Kawai

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The geometric structure, electronic state and reaction with O₂ of the Si(001) surface with Bi overlayer have been studied by LEED, XPS and UPS. Bi(0001) was grown epitaxially with interface structure of Bi(0001){single bond}Si(001) and Bi[2110]{single bond}Si[110] when Bi was deposited on Si(001)2 × 1 clean surface at room temperature. Subsequent annealing to 570-720 K caused the desorption of Bi, and successive phase transition of the 2 × n (10 > n > 5) surface structure was observed around 1 ML (i.e. atomic ratio of Bi to first layer Si is unity). The effect of an O₂ exposure of 1000 L at 570-720 K depended upon initial Bi coverage. At submonolayer Bi coverage, O₂ exposure induced the oxidation of Si surface and the desorption of Bi. On the other hand, the 2 × n surface which corresponded to about 1 ML were stable against O₂, indicating strong interaction between Bi and Si. At higher coverage, excess Bi atoms were oxidized.

Original language	English
Pages (from-to)	650-651
Number of pages	2
Journal	Vacuum
Volume	41
Issue number	1-3
DOIs	https://doi.org/10.1016/0042-207X(90)90444-4
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/0042-207X(90)90444-4

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title = "Surface structure and oxidation of Si(001)‒Bi",

abstract = "The geometric structure, electronic state and reaction with O2 of the Si(001) surface with Bi overlayer have been studied by LEED, XPS and UPS. Bi(0001) was grown epitaxially with interface structure of Bi(0001){single bond}Si(001) and Bi[2110]{single bond}Si[110] when Bi was deposited on Si(001)2 × 1 clean surface at room temperature. Subsequent annealing to 570-720 K caused the desorption of Bi, and successive phase transition of the 2 × n (10 > n > 5) surface structure was observed around 1 ML (i.e. atomic ratio of Bi to first layer Si is unity). The effect of an O2 exposure of 1000 L at 570-720 K depended upon initial Bi coverage. At submonolayer Bi coverage, O2 exposure induced the oxidation of Si surface and the desorption of Bi. On the other hand, the 2 × n surface which corresponded to about 1 ML were stable against O2, indicating strong interaction between Bi and Si. At higher coverage, excess Bi atoms were oxidized.",

author = "T. Hanada and M. Kawai",

year = "1990",

doi = "10.1016/0042-207X(90)90444-4",

language = "English",

volume = "41",

pages = "650--651",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

number = "1-3",

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TY - JOUR

T1 - Surface structure and oxidation of Si(001)‒Bi

AU - Hanada, T.

AU - Kawai, M.

PY - 1990

Y1 - 1990

N2 - The geometric structure, electronic state and reaction with O2 of the Si(001) surface with Bi overlayer have been studied by LEED, XPS and UPS. Bi(0001) was grown epitaxially with interface structure of Bi(0001){single bond}Si(001) and Bi[2110]{single bond}Si[110] when Bi was deposited on Si(001)2 × 1 clean surface at room temperature. Subsequent annealing to 570-720 K caused the desorption of Bi, and successive phase transition of the 2 × n (10 > n > 5) surface structure was observed around 1 ML (i.e. atomic ratio of Bi to first layer Si is unity). The effect of an O2 exposure of 1000 L at 570-720 K depended upon initial Bi coverage. At submonolayer Bi coverage, O2 exposure induced the oxidation of Si surface and the desorption of Bi. On the other hand, the 2 × n surface which corresponded to about 1 ML were stable against O2, indicating strong interaction between Bi and Si. At higher coverage, excess Bi atoms were oxidized.

AB - The geometric structure, electronic state and reaction with O2 of the Si(001) surface with Bi overlayer have been studied by LEED, XPS and UPS. Bi(0001) was grown epitaxially with interface structure of Bi(0001){single bond}Si(001) and Bi[2110]{single bond}Si[110] when Bi was deposited on Si(001)2 × 1 clean surface at room temperature. Subsequent annealing to 570-720 K caused the desorption of Bi, and successive phase transition of the 2 × n (10 > n > 5) surface structure was observed around 1 ML (i.e. atomic ratio of Bi to first layer Si is unity). The effect of an O2 exposure of 1000 L at 570-720 K depended upon initial Bi coverage. At submonolayer Bi coverage, O2 exposure induced the oxidation of Si surface and the desorption of Bi. On the other hand, the 2 × n surface which corresponded to about 1 ML were stable against O2, indicating strong interaction between Bi and Si. At higher coverage, excess Bi atoms were oxidized.

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DO - 10.1016/0042-207X(90)90444-4

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SN - 0042-207X

VL - 41

SP - 650

EP - 651

JO - Vacuum

JF - Vacuum

IS - 1-3

ER -

Surface structure and oxidation of Si(001)‒Bi

Abstract

ASJC Scopus subject areas

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