TY - JOUR
T1 - Surface structure of InGaAs/InP(0 0 1) ordered alloy during and after growth
AU - Mori, Takahiro
AU - Hanada, Takashi
AU - Morimura, Toshiharu
AU - Shin, Keesam
AU - Makino, Hisao
AU - Yao, Takafumi
PY - 2004/10/15
Y1 - 2004/10/15
N2 - We investigated the surface of ordered InGaAs alloys lattice-matched with InP(0 0 1) substrates during and after growth using reflectance difference or reflectance anisotropy spectroscopy (RDS or RAS). Bulk atomic ordering was investigated by Roman spectroscopy and ex situ RDS measurements. We observed that a (2 × 3) surface during growth is a trigger for the bulk cation ordering in the InGaAs/InP(0 0 1) system. Furthermore a (4 × 3) structure was observed after the growth stopped. In terms of RD measurements, a c(8 × 6) or (8 × 3) surface structure, including one-dimensional disorder boundaries, are possible structures for the two observed surfaces.
AB - We investigated the surface of ordered InGaAs alloys lattice-matched with InP(0 0 1) substrates during and after growth using reflectance difference or reflectance anisotropy spectroscopy (RDS or RAS). Bulk atomic ordering was investigated by Roman spectroscopy and ex situ RDS measurements. We observed that a (2 × 3) surface during growth is a trigger for the bulk cation ordering in the InGaAs/InP(0 0 1) system. Furthermore a (4 × 3) structure was observed after the growth stopped. In terms of RD measurements, a c(8 × 6) or (8 × 3) surface structure, including one-dimensional disorder boundaries, are possible structures for the two observed surfaces.
KW - Reflectance anisotropy spectroscopy
KW - Reflectance difference spectroscopy
KW - Spontaneous ordering
KW - Surface structure
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U2 - 10.1016/j.apsusc.2004.07.027
DO - 10.1016/j.apsusc.2004.07.027
M3 - Article
AN - SCOPUS:4644327954
SN - 0169-4332
VL - 237
SP - 230
EP - 234
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1-4
ER -