Surface structure of InGaAs/InP(0 0 1) ordered alloy during and after growth

Takahiro Mori, Takashi Hanada, Toshiharu Morimura, Keesam Shin, Hisao Makino, Takafumi Yao

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8 Citations (Scopus)


We investigated the surface of ordered InGaAs alloys lattice-matched with InP(0 0 1) substrates during and after growth using reflectance difference or reflectance anisotropy spectroscopy (RDS or RAS). Bulk atomic ordering was investigated by Roman spectroscopy and ex situ RDS measurements. We observed that a (2 × 3) surface during growth is a trigger for the bulk cation ordering in the InGaAs/InP(0 0 1) system. Furthermore a (4 × 3) structure was observed after the growth stopped. In terms of RD measurements, a c(8 × 6) or (8 × 3) surface structure, including one-dimensional disorder boundaries, are possible structures for the two observed surfaces.

Original languageEnglish
Pages (from-to)230-234
Number of pages5
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2004 Oct 15


  • Reflectance anisotropy spectroscopy
  • Reflectance difference spectroscopy
  • Spontaneous ordering
  • Surface structure


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