TY - JOUR
T1 - Switching of charge-density wave by carrier tuning in monolayer TiTe2
AU - Yanagizawa, Koki
AU - Sugawara, Katsuaki
AU - Kawakami, Tappei
AU - Ando, Ryuichi
AU - Yaegashi, Ken
AU - Nakayama, Kosuke
AU - Souma, Seigo
AU - Tanaka, Kiyohisa
AU - Kitamura, Miho
AU - Horiba, Koji
AU - Kumigashira, Hiroshi
AU - Takahashi, Takashi
AU - Sato, Takafumi
N1 - Publisher Copyright:
© 2023 American Physical Society.
PY - 2023/10
Y1 - 2023/10
N2 - How charge-density wave (CDW) is influenced by the change in the dimensionality is a fundamental question in condensed-matter physics. Monolayer titanium ditelluride (TiTe2) undergoes 2×2 CDW despite the absence of CDW in the bulk counterpart, whereas the mechanism of CDW is under intensive debate. Here we show that the CDW of monolayer TiTe2 can be conveniently switched by carrier tuning via controlling the Te ratio during molecular-beam epitaxy or depositing potassium (K) atoms on the surface. This is demonstrated by monitoring the CDW-induced 2×2 band folding using angle-resolved photoemission spectroscopy. Remarkably, the CDW appears only when the inner hole pocket at the Γ point and the elongated electron pocket at the M point show partial Fermi-surface nesting. The present study suggests that the carrier doping is an effective method to pin down the mechanism of CDW in atomic-layer transition-metal dichalcogenides.
AB - How charge-density wave (CDW) is influenced by the change in the dimensionality is a fundamental question in condensed-matter physics. Monolayer titanium ditelluride (TiTe2) undergoes 2×2 CDW despite the absence of CDW in the bulk counterpart, whereas the mechanism of CDW is under intensive debate. Here we show that the CDW of monolayer TiTe2 can be conveniently switched by carrier tuning via controlling the Te ratio during molecular-beam epitaxy or depositing potassium (K) atoms on the surface. This is demonstrated by monitoring the CDW-induced 2×2 band folding using angle-resolved photoemission spectroscopy. Remarkably, the CDW appears only when the inner hole pocket at the Γ point and the elongated electron pocket at the M point show partial Fermi-surface nesting. The present study suggests that the carrier doping is an effective method to pin down the mechanism of CDW in atomic-layer transition-metal dichalcogenides.
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U2 - 10.1103/PhysRevMaterials.7.104002
DO - 10.1103/PhysRevMaterials.7.104002
M3 - Article
AN - SCOPUS:85174855884
SN - 2475-9953
VL - 7
JO - Physical Review Materials
JF - Physical Review Materials
IS - 10
M1 - 104002
ER -