TY - GEN
T1 - Symmetrical, simple pair circuit on single-dopant device with thermal-noise-harnessing ability and its application to a full adder circuit
AU - Kaide, Risa
AU - Shinada, Takahiro
AU - Oya, Takahide
N1 - Funding Information:
This work was partly supported by JSPS KAKENHI (Grant Numbers JP18H03766 and JP19H02545).
Publisher Copyright:
© 2020 IEEE.
PY - 2020/7
Y1 - 2020/7
N2 - This paper describes a symmetrical, simple pair circuit that can harness thermal noise energy to operate correctly on a 'single-dopant device' and its application to a full adder circuit. The single-dopant device is an atomic scale solid-state device and can be used, for example, as an actual platform for a single-electron circuit. We here aim to fabricate actual single-dopant circuits with a deterministic doping method. As a first step toward this, we design a possible circuit on the device and test its operation by Monte Carlo computer simulations. The simulation results confirmed correct circuit operation and showed that the device exhibited thermal-noise-harnessing abilities. Moreover, we also found that the simple circuit can operate as a full adder circuit. We believe that we will successfully fabricate a simple, actual single-dopant full-adder circuit in the near future.
AB - This paper describes a symmetrical, simple pair circuit that can harness thermal noise energy to operate correctly on a 'single-dopant device' and its application to a full adder circuit. The single-dopant device is an atomic scale solid-state device and can be used, for example, as an actual platform for a single-electron circuit. We here aim to fabricate actual single-dopant circuits with a deterministic doping method. As a first step toward this, we design a possible circuit on the device and test its operation by Monte Carlo computer simulations. The simulation results confirmed correct circuit operation and showed that the device exhibited thermal-noise-harnessing abilities. Moreover, we also found that the simple circuit can operate as a full adder circuit. We believe that we will successfully fabricate a simple, actual single-dopant full-adder circuit in the near future.
UR - http://www.scopus.com/inward/record.url?scp=85091008630&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85091008630&partnerID=8YFLogxK
U2 - 10.1109/NANO47656.2020.9183532
DO - 10.1109/NANO47656.2020.9183532
M3 - Conference contribution
AN - SCOPUS:85091008630
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 115
EP - 119
BT - NANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings
PB - IEEE Computer Society
T2 - 20th IEEE International Conference on Nanotechnology, NANO 2020
Y2 - 29 July 2020 through 31 July 2020
ER -