TY - GEN
T1 - Synchrotron radiation nano-spectroscopy of dielectrics for LSI and ReRAM
AU - Oshima, Masaharu
AU - Toyoda, Satoshi
AU - Horiba, Koji
AU - Yasuhara, Ryutaro
AU - Kumigashira, Hiroshi
PY - 2011
Y1 - 2011
N2 - Metal/high-k gate dielectrics stack structures for LSIs and metal/transition-metal-oxides (TMO)/metal structures for resistance random access memory (ReRAM) have been analyzed using synchrotron radiation nano-spectroscopy from the viewpoint of interfacial chemical and electronic states. We have developed a scanning photoelectron microscope (SPEM) with an angle-resolved electron analyzer and succeeded in obtaining chemical-state- resolved images and pin-point in-depth profiles of LSI gate patterns with 70 nm lateral resolution. For ReRAM, chemical-state-resolved images of Cu for a planar-type Pt/CuO/Pt resistance switching (RS) device revealed conductive filaments in TMO using photoelectron emission microscope (PEEM). Furthermore, in and out diffusion phenomena of oxygen corresponding to bias polarity for RS were observed for Pt/TaOx/Pt switching devices. Interfacial redox reactions which are common to all ReRAM devices are also observed for Al/TMO interfaces.
AB - Metal/high-k gate dielectrics stack structures for LSIs and metal/transition-metal-oxides (TMO)/metal structures for resistance random access memory (ReRAM) have been analyzed using synchrotron radiation nano-spectroscopy from the viewpoint of interfacial chemical and electronic states. We have developed a scanning photoelectron microscope (SPEM) with an angle-resolved electron analyzer and succeeded in obtaining chemical-state- resolved images and pin-point in-depth profiles of LSI gate patterns with 70 nm lateral resolution. For ReRAM, chemical-state-resolved images of Cu for a planar-type Pt/CuO/Pt resistance switching (RS) device revealed conductive filaments in TMO using photoelectron emission microscope (PEEM). Furthermore, in and out diffusion phenomena of oxygen corresponding to bias polarity for RS were observed for Pt/TaOx/Pt switching devices. Interfacial redox reactions which are common to all ReRAM devices are also observed for Al/TMO interfaces.
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U2 - 10.1149/1.3633061
DO - 10.1149/1.3633061
M3 - Conference contribution
AN - SCOPUS:84857292044
SN - 9781566779036
T3 - ECS Transactions
SP - 453
EP - 460
BT - Physics and Technology of High-k Materials 9
PB - Electrochemical Society Inc.
T2 - 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
Y2 - 10 October 2011 through 12 October 2011
ER -