@inproceedings{700159fc8d144d1f9ab6d9614c630802,
title = "Synchrotron radiation photoelectron spectroscopy of metal gate / HfSiO(N) /SiO(N) / Si stack structures",
abstract = "In order to meet strong demands for precise analysis in metal gate/high-k dielectrics stack structures, we have developed high resolution photoelectron spectroscopy techniques using synchrotron radiation. We have succeeded in analyzing precise chemical-state-resolved in-depth profiles of gate electrode/dielectric multilayer/ Si structures from both front and back sides by angle-resolved photoelectron spectroscopy and maximum entropy method. Furthermore, pin-point nano-scale indepth analysis using scanning photoelectron microscopy with sub 100 nm SR beam revealed the local formation of the intermixed region having suicide. Finally, non-destructive defect analysis using irradiation time-dependent photoelectron spectroscopy enabled us to analyze trapped charge and fixed charge.",
author = "M. Oshima and S. Toyoda and H. Kamada and T. Tanimura and Y. Nakamura and K. Horiba and H. Kumigashira",
year = "2010",
doi = "10.1149/1.3481610",
language = "English",
isbn = "9781566778220",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "231--240",
booktitle = "Physics and Technology of High-k Materials 8",
edition = "3",
}
