Abstract
High-entropy alloys (HEA) have been receiving increased attention for their excellent mechanical properties. Our recent study revealed that Si-doped face-centered cubic (FCC) HEAs have great potential to improve both strength and ductility. Here, we carried out first-principles calculations in cooperation with Monte Carlo simulation and structural factor analysis to explore the effect of Si addition on the macroscopic mechanical properties. As a result, Si addition increased the local lattice distortion and the stacking fault energy (SFE). Furthermore, the short-range order formation in Si-doped alloy caused highly fluctuated SFE. Thus, the heterogeneous solid solution states in which low and high stacking fault regions are distributed into the matrix were nucleated. This unique feature in Si-doped FCC-HEA induces ultrafine twin formation in Si-doped alloys, which can be a dominant factor in improving both strength and ductility.
Original language | English |
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Article number | 024003 |
Journal | Modelling and Simulation in Materials Science and Engineering |
Volume | 30 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2022 Mar |
Keywords
- chemical short-range order
- first-principles calculations
- high-entropy alloys
- lattice distortion
- stacking fault energy
ASJC Scopus subject areas
- Modelling and Simulation
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Computer Science Applications