This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth telluride (Bi2Te3) and P-type antimony telluride (Sb2Te3), are performed and compared. As a result, highly oriented Bi2Te3 and Sb2Te3 thick films with a bulk-like structure are successfully synthesized with high Seebeck coefficients and low electrical resistivities. Six hundred-micrometer-thick Bi2Te3 and 500-μm-thick Sb2Te3 films are obtained. The Seebeck coefficients for the Bi2Te3 and Sb2Te3 films are -150 ± 20 and 170 ± 20 μV/K, respectively. Additionally, the electrical resistivity for the Bi2Te3 is 15 ± 5 μΩm and is 25 ± 5 μΩm for the Sb2Te3. The power factors of each thermoelectric material can reach 15 × 10-4 W/mK2 for Bi2Te3 and 11.2 × 10-4 W/mK2 for Sb2Te3.
- Annealing effects
- Electrochemical deposition
- Thermoelectric materials
- Thermoelectric power generators
- Thick films