Synthesis and microstructure of Si3N4-TiN nanocomposites

Mei Yang; Mingli Lv; Hongmin Zhu

Synthesis and microstructure of Si₃N₄-TiN nanocomposites

Mei Yang, Mingli Lv, Hongmin Zhu

ENG - Metallurgy

University of Science and Technology Beijing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Si₃N₄-TiN nanocomposite was prepared by in situ coating in liquid ammonia using TiCl₄ and Si₃N₄ as starting materials. The reduction reaction of TiCl₄ by sodium was performed at around - 40°C and resulted TiN nano-powders which nuclei and grew on the surface of Si₃N₄ particles. The composite powder was consolidated through spark plasma sintering (SPS) at 1600°C and dense compact (>98% of theoretical) with grain size of less than 500 nanometers was obtained. By compositing 20vol. % TiN to Si₃N ₄. the electrical resistivity of the compact was reduced to small enough value (3.6×10^-3Ω·cm) for electrical discharge machining (EDM).

Original language	English
Title of host publication	TMS2008 - 137th Annual Meeting and Exhibition Supplemental Proceedings
Subtitle of host publication	Materials Processing and Properties
Pages	237-242
Number of pages	6
Publication status	Published - 2008
Event	TMS 2008 Annual Meeting Supplemental: Materials Processing and Properties - New Orleans, LA, United States Duration: 2008 Mar 9 → 2008 Mar 13

Publication series

Name	TMS Annual Meeting
Volume	3

Conference

Conference	TMS 2008 Annual Meeting Supplemental: Materials Processing and Properties
Country/Territory	United States
City	New Orleans, LA
Period	08/3/9 → 08/3/13

Keywords

Coating
Conductive
SiN-TiN

Cite this

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title = "Synthesis and microstructure of Si3N4-TiN nanocomposites",

abstract = "Si3N4-TiN nanocomposite was prepared by in situ coating in liquid ammonia using TiCl4 and Si3N4 as starting materials. The reduction reaction of TiCl4 by sodium was performed at around - 40°C and resulted TiN nano-powders which nuclei and grew on the surface of Si3N4 particles. The composite powder was consolidated through spark plasma sintering (SPS) at 1600°C and dense compact (>98% of theoretical) with grain size of less than 500 nanometers was obtained. By compositing 20vol. % TiN to Si3N 4. the electrical resistivity of the compact was reduced to small enough value (3.6×10-3Ω·cm) for electrical discharge machining (EDM).",

keywords = "Coating, Conductive, SiN-TiN",

author = "Mei Yang and Mingli Lv and Hongmin Zhu",

year = "2008",

language = "English",

isbn = "9780873397186",

series = "TMS Annual Meeting",

pages = "237--242",

booktitle = "TMS2008 - 137th Annual Meeting and Exhibition Supplemental Proceedings",

note = "TMS 2008 Annual Meeting Supplemental: Materials Processing and Properties ; Conference date: 09-03-2008 Through 13-03-2008",

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TY - GEN

T1 - Synthesis and microstructure of Si3N4-TiN nanocomposites

AU - Yang, Mei

AU - Lv, Mingli

AU - Zhu, Hongmin

PY - 2008

Y1 - 2008

N2 - Si3N4-TiN nanocomposite was prepared by in situ coating in liquid ammonia using TiCl4 and Si3N4 as starting materials. The reduction reaction of TiCl4 by sodium was performed at around - 40°C and resulted TiN nano-powders which nuclei and grew on the surface of Si3N4 particles. The composite powder was consolidated through spark plasma sintering (SPS) at 1600°C and dense compact (>98% of theoretical) with grain size of less than 500 nanometers was obtained. By compositing 20vol. % TiN to Si3N 4. the electrical resistivity of the compact was reduced to small enough value (3.6×10-3Ω·cm) for electrical discharge machining (EDM).

AB - Si3N4-TiN nanocomposite was prepared by in situ coating in liquid ammonia using TiCl4 and Si3N4 as starting materials. The reduction reaction of TiCl4 by sodium was performed at around - 40°C and resulted TiN nano-powders which nuclei and grew on the surface of Si3N4 particles. The composite powder was consolidated through spark plasma sintering (SPS) at 1600°C and dense compact (>98% of theoretical) with grain size of less than 500 nanometers was obtained. By compositing 20vol. % TiN to Si3N 4. the electrical resistivity of the compact was reduced to small enough value (3.6×10-3Ω·cm) for electrical discharge machining (EDM).

KW - Coating

KW - Conductive

KW - SiN-TiN

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M3 - Conference contribution

AN - SCOPUS:51749112726

SN - 9780873397186

T3 - TMS Annual Meeting

SP - 237

EP - 242

BT - TMS2008 - 137th Annual Meeting and Exhibition Supplemental Proceedings

T2 - TMS 2008 Annual Meeting Supplemental: Materials Processing and Properties

Y2 - 9 March 2008 through 13 March 2008

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