Synthesis of Eu-doped GaN by the Na flux method and characterization

Hiroshi Nanbu; Takahiro Yamada; Hisanori Yamane

doi:10.2497/jjspm.54.126

Synthesis of Eu-doped GaN by the Na flux method and characterization

Hiroshi Nanbu, Takahiro Yamada, Hisanori Yamane

Research output: Contribution to journal › Article › peer-review

Abstract

Eu-doped GaN crystals were synthesized at 600-750°C and N₂ pressure of 5 MPa from 1 mol% Eu-added Na-Ga melts. The yield and morphology of crystals varied with temperature and Na mole fraction, r_Na=Na/(Na+Ga) in the melts. Colorless transparent columnar crystals of Eu-doped GaN were obtained as crusts formed on the Na-Ga melt surface at r_Na=0.67 and 650 or 700 °C. Under an ultraviolet light, the crusts glowed red. A strong emission peak concerned with the intra-4f transition of Eu³⁺from ⁵D₀ to ⁷F₂ was observed at 621 nm in the photoluminescence (PL) spectrum. The maximum PL intensity was observed in the sample prepared at r_Na=0.67 and 650 °C.

Original language	English
Pages (from-to)	126-129
Number of pages	4
Journal	Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume	54
Issue number	2
DOIs	https://doi.org/10.2497/jjspm.54.126
Publication status	Published - 2007 Feb

Keywords

Eu-doped
GaN
Na flux method
Photoluminescence

ASJC Scopus subject areas

Mechanical Engineering
Industrial and Manufacturing Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.2497/jjspm.54.126

Cite this

@article{f4223fb9896b4fc289d596c33b49dd65,

title = "Synthesis of Eu-doped GaN by the Na flux method and characterization",

abstract = "Eu-doped GaN crystals were synthesized at 600-750°C and N2 pressure of 5 MPa from 1 mol% Eu-added Na-Ga melts. The yield and morphology of crystals varied with temperature and Na mole fraction, rNa=Na/(Na+Ga) in the melts. Colorless transparent columnar crystals of Eu-doped GaN were obtained as crusts formed on the Na-Ga melt surface at rNa=0.67 and 650 or 700 °C. Under an ultraviolet light, the crusts glowed red. A strong emission peak concerned with the intra-4f transition of Eu3+from 5D0 to 7F2 was observed at 621 nm in the photoluminescence (PL) spectrum. The maximum PL intensity was observed in the sample prepared at rNa=0.67 and 650 °C.",

keywords = "Eu-doped, GaN, Na flux method, Photoluminescence",

author = "Hiroshi Nanbu and Takahiro Yamada and Hisanori Yamane",

year = "2007",

month = feb,

doi = "10.2497/jjspm.54.126",

language = "English",

volume = "54",

pages = "126--129",

journal = "Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy",

issn = "0532-8799",

publisher = "Funtai Funamtsu Yakin Kyokai/Japan Soc. of Powder Metallurgy",

number = "2",

}

TY - JOUR

T1 - Synthesis of Eu-doped GaN by the Na flux method and characterization

AU - Nanbu, Hiroshi

AU - Yamada, Takahiro

AU - Yamane, Hisanori

PY - 2007/2

Y1 - 2007/2

N2 - Eu-doped GaN crystals were synthesized at 600-750°C and N2 pressure of 5 MPa from 1 mol% Eu-added Na-Ga melts. The yield and morphology of crystals varied with temperature and Na mole fraction, rNa=Na/(Na+Ga) in the melts. Colorless transparent columnar crystals of Eu-doped GaN were obtained as crusts formed on the Na-Ga melt surface at rNa=0.67 and 650 or 700 °C. Under an ultraviolet light, the crusts glowed red. A strong emission peak concerned with the intra-4f transition of Eu3+from 5D0 to 7F2 was observed at 621 nm in the photoluminescence (PL) spectrum. The maximum PL intensity was observed in the sample prepared at rNa=0.67 and 650 °C.

AB - Eu-doped GaN crystals were synthesized at 600-750°C and N2 pressure of 5 MPa from 1 mol% Eu-added Na-Ga melts. The yield and morphology of crystals varied with temperature and Na mole fraction, rNa=Na/(Na+Ga) in the melts. Colorless transparent columnar crystals of Eu-doped GaN were obtained as crusts formed on the Na-Ga melt surface at rNa=0.67 and 650 or 700 °C. Under an ultraviolet light, the crusts glowed red. A strong emission peak concerned with the intra-4f transition of Eu3+from 5D0 to 7F2 was observed at 621 nm in the photoluminescence (PL) spectrum. The maximum PL intensity was observed in the sample prepared at rNa=0.67 and 650 °C.

KW - Eu-doped

KW - GaN

KW - Na flux method

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=34248350822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248350822&partnerID=8YFLogxK

U2 - 10.2497/jjspm.54.126

DO - 10.2497/jjspm.54.126

M3 - Article

AN - SCOPUS:34248350822

SN - 0532-8799

VL - 54

SP - 126

EP - 129

JO - Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy

JF - Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy

IS - 2

ER -

Synthesis of Eu-doped GaN by the Na flux method and characterization

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this