Synthesis of Eu-doped GaN by the Na flux method and characterization

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    Eu-doped GaN crystals were synthesized at 600-750°C and N2 pressure of 5 MPa from 1 mol% Eu-added Na-Ga melts. The yield and morphology of crystals varied with temperature and Na mole fraction, rNa=Na/(Na+Ga) in the melts. Colorless transparent columnar crystals of Eu-doped GaN were obtained as crusts formed on the Na-Ga melt surface at rNa=0.67 and 650 or 700 °C. Under an ultraviolet light, the crusts glowed red. A strong emission peak concerned with the intra-4f transition of Eu3+from 5D0 to 7F2 was observed at 621 nm in the photoluminescence (PL) spectrum. The maximum PL intensity was observed in the sample prepared at rNa=0.67 and 650 °C.

    Original languageEnglish
    Pages (from-to)126-129
    Number of pages4
    JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
    Issue number2
    Publication statusPublished - 2007 Feb


    • Eu-doped
    • GaN
    • Na flux method
    • Photoluminescence

    ASJC Scopus subject areas

    • Mechanical Engineering
    • Industrial and Manufacturing Engineering
    • Metals and Alloys
    • Materials Chemistry


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