Synthesis of suboxides, Ti8(SnxBi1−x)O7and Ti11.17(Sn0.85Bi0.15)3O10, using a Bi flux and their crystal structures

Hisanori Yamane, Shinsaku Amano

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Single crystals of Ti8(SnxBi1−x)O7(x = 0.41, 0.65, 0.72, 0.935) were obtained by heating mixtures of Bi 3.0 mmol, Ti 0.5 mmol, TiO20.5 mmol, and Sn 0.03, 0.07, 0.20, 1.00 mmol at 900 °C and by slow cooling from this temperature. The crystal structures of Ti8(SnxBi1−x)O7(orthorhombic, space group Cmmm, a = 7.85283(13)–7.83817(15) Å, b = 16.8007(2)–16.7741(3) Å, c = 3.01479(5)–2.99499(5) Å) were analyzed by single crystal X-ray diffraction. The x values of Ti8(SnxBi1−x)O7in the single crystals were larger than the mole fractions Sn/(Sn + Bi) of the starting mixtures, indicating that the crystals preferentially contained Sn. The cell volumes of Ti8(SnxBi1−x)O7decreased from 397.750(11) Å3to 393.776(13) Å3with increasing x, which corresponded to the size difference between Sn and Bi atoms. Single crystals of Ti11.17(Sn0.85Bi0.15)3O10(cubic, space group Fm3¯m, a = 13.5890(4) Å) were also found in the sample prepared from the starting mixture containing 1.00 mmol Sn. These suboxides are specific by combinations of structural futures of oxides and intermetallics. A polycrystalline bulk sample which mainly consisted of Ti8(Sn0.77Bi0.23)O7was fabricated by heating the compact of a starting materials mixture with the stoichiometric composition at 900 °C for 12 h. The electrical resistivity of the bulk sample was 7.0 × 10−6Ωm at 300 K and monotonically decreased with decreasing temperature.

Original languageEnglish
Pages (from-to)967-974
Number of pages8
JournalJournal of Alloys and Compounds
Volume701
DOIs
Publication statusPublished - 2017

Keywords

  • Crystal growth
  • Crystal structure
  • Oxide materials
  • X-ray diffraction

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