T1/2 Dependence of Resistivity and Anomalous Magnetoresistance in Granular Bismuth

Yoji Koike, Masami Okamura, Tetsuo Fukase

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In granular bismuth, electrical resistivity with T1/2 dependence was observed in the low temperature range 0.5-4.2 K, while anomalous positive magnetoresistance was found in this range. This anomalous magnetoresistance, which increases with decreasing temperature, is farily well explained by the three-dimensional localization theory taking account of the effect of strong spin-orbit interaction. The spin-orbit scattering time Tso is estimated as 4 x 10-13 sec, and the inelastic scattering time changes in proportion to On the other hand, dependence of resistivity seems due to the interaction effect between electrons.

Original languageEnglish
Pages (from-to)1115-1118
Number of pages4
Journaljournal of the physical society of japan
Issue number4
Publication statusPublished - 1983 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'T1/2 Dependence of Resistivity and Anomalous Magnetoresistance in Granular Bismuth'. Together they form a unique fingerprint.

Cite this