Ta-doped anatase TiO2 epitaxial film as transparent conducting oxide

Taro Hitosugi; Yutaka Furubayashi; Atsuki Ueda; Kinnosuke Itabashi; Kazuhisa Inaba; Yasushi Hirose; Go Kinoda; Yukio Yamamoto; Toshihiro Shimada; Tetsuya Hasegawa

doi:10.1143/JJAP.44.L1063

Ta-doped anatase TiO₂ epitaxial film as transparent conducting oxide

Taro Hitosugi, Yutaka Furubayashi, Atsuki Ueda, Kinnosuke Itabashi, Kazuhisa Inaba, Yasushi Hirose, Go Kinoda, Yukio Yamamoto, Toshihiro Shimada, Tetsuya Hasegawa

Research output: Contribution to journal › Article › peer-review

149 Citations (Scopus)

Abstract

We present electrical transport and optical properties of Ta-doped TiO ₂ epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti_0.95Ta_0.05O ₂ film exhibited a resistivity of 2.5 × 10_-4 Ωcm at room temperature, and an internal transmittance of 95% in the visible light region. These values are comparable to those of a widely used transparent conducting oxide (TCO), indium tin oxide. Furthermore, this new material falls into a new category of TCOs that utilizes d electrons.

Original language	English
Pages (from-to)	L1063-L1065
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	33-36
DOIs	https://doi.org/10.1143/JJAP.44.L1063
Publication status	Published - 2005 Aug 26
Externally published	Yes

Keywords

Epitaxial
Pulsed laser deposition
Thin film
TiO
Transparent conducting oxide

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.44.L1063

Cite this

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title = "Ta-doped anatase TiO2 epitaxial film as transparent conducting oxide",

abstract = "We present electrical transport and optical properties of Ta-doped TiO 2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O 2 film exhibited a resistivity of 2.5 × 10-4 Ωcm at room temperature, and an internal transmittance of 95% in the visible light region. These values are comparable to those of a widely used transparent conducting oxide (TCO), indium tin oxide. Furthermore, this new material falls into a new category of TCOs that utilizes d electrons.",

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T1 - Ta-doped anatase TiO2 epitaxial film as transparent conducting oxide

AU - Hitosugi, Taro

AU - Furubayashi, Yutaka

AU - Ueda, Atsuki

AU - Itabashi, Kinnosuke

AU - Inaba, Kazuhisa

AU - Hirose, Yasushi

AU - Kinoda, Go

AU - Yamamoto, Yukio

AU - Shimada, Toshihiro

AU - Hasegawa, Tetsuya

PY - 2005/8/26

Y1 - 2005/8/26

N2 - We present electrical transport and optical properties of Ta-doped TiO 2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O 2 film exhibited a resistivity of 2.5 × 10-4 Ωcm at room temperature, and an internal transmittance of 95% in the visible light region. These values are comparable to those of a widely used transparent conducting oxide (TCO), indium tin oxide. Furthermore, this new material falls into a new category of TCOs that utilizes d electrons.

AB - We present electrical transport and optical properties of Ta-doped TiO 2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O 2 film exhibited a resistivity of 2.5 × 10-4 Ωcm at room temperature, and an internal transmittance of 95% in the visible light region. These values are comparable to those of a widely used transparent conducting oxide (TCO), indium tin oxide. Furthermore, this new material falls into a new category of TCOs that utilizes d electrons.

KW - Epitaxial

KW - Pulsed laser deposition

KW - Thin film

KW - TiO

KW - Transparent conducting oxide

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