Ta2O5 interfacial layer between GST and W plug enabling low power operation of phase change memories

Y. Matsui; K. Kurotsuchi; O. Tonomura; T. Morikawa; M. Kinoshita; Y. Fujisaki; N. Matsuzaki; S. Hanzawa; M. Terao; N. Takaura; H. Moriya; T. Iwasaki; M. Moniwa; T. Koga

doi:10.1109/IEDM.2006.346908

Ta₂O₅ interfacial layer between GST and W plug enabling low power operation of phase change memories

Y. Matsui, K. Kurotsuchi, O. Tonomura, T. Morikawa, M. Kinoshita, Y. Fujisaki, N. Matsuzaki, S. Hanzawa, M. Terao, N. Takaura, H. Moriya, T. Iwasaki, M. Moniwa, T. Koga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

18 Citations (Scopus)

Abstract

A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., current and voltage) for the cell is significantly reduced by inserting a very thin Ta₂O₅ film between GeSbTe (GST) and a W plug. The Ta₂O₅ interfacial layer works not only as a heat insulator enabling effective heat generation in GST but also as an adhesion layer between GST and SiO₂ underneath. Nonetheless, sufficient current flows through the interfacial layer due to direct tunneling. A low programming power of 1.5 V/100 μA can therefore be obtained even on a W plug with a diameter of 180 nm fabricated using standard 0.13-μm CMOS technology. In addition, the uniformity and repeatability of cell resistance are excellent because of the inherently stable Ta ₂O₅ film properties.

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346908
Publication status	Published - 2006 Dec 1
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: 2006 Dec 10 → 2006 Dec 13

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2006 International Electron Devices Meeting, IEDM
Country/Territory	United States
City	San Francisco, CA
Period	06/12/10 → 06/12/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2006.346908

Cite this

Matsui, Y., Kurotsuchi, K., Tonomura, O., Morikawa, T., Kinoshita, M., Fujisaki, Y., Matsuzaki, N., Hanzawa, S., Terao, M., Takaura, N., Moriya, H., Iwasaki, T., Moniwa, M., & Koga, T. (2006). Ta₂O₅ interfacial layer between GST and W plug enabling low power operation of phase change memories. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154327] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346908

Ta₂O₅ interfacial layer between GST and W plug enabling low power operation of phase change memories. / Matsui, Y.; Kurotsuchi, K.; Tonomura, O. et al.
2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154327 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsui, Y, Kurotsuchi, K, Tonomura, O, Morikawa, T, Kinoshita, M, Fujisaki, Y, Matsuzaki, N, Hanzawa, S, Terao, M, Takaura, N, Moriya, H, Iwasaki, T, Moniwa, M & Koga, T 2006, Ta₂O₅ interfacial layer between GST and W plug enabling low power operation of phase change memories. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154327, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 06/12/10. https://doi.org/10.1109/IEDM.2006.346908

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abstract = "A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., current and voltage) for the cell is significantly reduced by inserting a very thin Ta2O5 film between GeSbTe (GST) and a W plug. The Ta2O5 interfacial layer works not only as a heat insulator enabling effective heat generation in GST but also as an adhesion layer between GST and SiO2 underneath. Nonetheless, sufficient current flows through the interfacial layer due to direct tunneling. A low programming power of 1.5 V/100 μA can therefore be obtained even on a W plug with a diameter of 180 nm fabricated using standard 0.13-μm CMOS technology. In addition, the uniformity and repeatability of cell resistance are excellent because of the inherently stable Ta 2O5 film properties.",

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AU - Kinoshita, M.

AU - Fujisaki, Y.

AU - Matsuzaki, N.

AU - Hanzawa, S.

AU - Terao, M.

AU - Takaura, N.

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AB - A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., current and voltage) for the cell is significantly reduced by inserting a very thin Ta2O5 film between GeSbTe (GST) and a W plug. The Ta2O5 interfacial layer works not only as a heat insulator enabling effective heat generation in GST but also as an adhesion layer between GST and SiO2 underneath. Nonetheless, sufficient current flows through the interfacial layer due to direct tunneling. A low programming power of 1.5 V/100 μA can therefore be obtained even on a W plug with a diameter of 180 nm fabricated using standard 0.13-μm CMOS technology. In addition, the uniformity and repeatability of cell resistance are excellent because of the inherently stable Ta 2O5 film properties.

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