Ta/Mo stack dual metal gate technology applicable to gate-first processes

Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Meishoku Masahara, Kenichi Ishii, Hiromi Yamauchi, Junichi Tsukada, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Dual metal gate technology using a combination of Mo and a Ta/Mo stack suitable for fully depleted silicon-on-insulator (FD-SOI) and double-gate (DG) transistors applicable to a gate-first process has been investigated. The annealing of the Ta/Mo stack at 600-700°C induces the diffusion of Ta into the Mo layer, and different work functions between the single Mo layer and Ta/Mo stack gates are successfully obtained. The sputtered Mo gate exhibits a higher thermal stability than the e-beam-evaporated Mo gate. The difference in flatband voltage (0.31 V) between the Mo and Ta/Mo gates is ensured even after annealing at 850°C for 20 s, by which subsequent source/drain activation can be carried out.

Original languageEnglish
Pages (from-to)1825-1829
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - 2007 Apr 24


  • Dual metal
  • FD-SOI
  • Interdiffusion
  • Metal gate
  • Mo
  • Ta
  • Work function


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