Tbit/inch2 ferroelectric data storage using scanning nonlinear dielectric microscopy

Yasuo Cho, K. Fujimoto, Y. Hiranaga, Be Liu, Y. Wagatuma, A. Onoe, K. Terabe, K. Kitamura

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)


We have developed scanning nonlinear dielectric microscopy (SNDM) for observation of ferroelectric polarization distributions range. We also have studied high-density ferroelectric data storage using this microscope. In this study, we selected a stoichiometric (SLT) and a congruent (CLT) lithium tantalate (LiTaO3) single crystal- thin plates, with 180° C-C domain only, as a specimen. At first, as basic investigation of domain engineering, we revealed the relationship between applied voltages to SLT sample and inverted domain sizes, and also clarified the inverted domain size as a function of voltage applying time. As a result, we succeeded to obtain nano-sized domain inverted dots. These very small nano-domain dots were quite stable with time. Finally, in the CLT single crystal thin plate, whitch is expected that higher-density strage is possible, we performed actual data storage with the density of 1.5 Tbit/inch2.

Original languageEnglish
Title of host publicationProceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
PublisherIEEE Computer Society
Number of pages5
ISBN (Electronic)0780375386
Publication statusPublished - 2002
Event2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 - Washington, United States
Duration: 2002 Aug 262002 Aug 28

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380


Conference2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
Country/TerritoryUnited States


  • Atomic force microscopy
  • Dielectric constant
  • Ferroelectric materials
  • Laboratories
  • Magnetic materials
  • Memory
  • Polarization
  • Probes
  • US Department of Transportation
  • Voltage


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