Tbit/inch2 ferroelectric data storage using scanning nonlinear dielectric microscopy

Yasuo Cho; K. Fujimoto; Y. Hiranaga; Be Liu; Y. Wagatuma; A. Onoe; K. Terabe; K. Kitamura

doi:10.1109/NANO.2002.1032241

Tbit/inch² ferroelectric data storage using scanning nonlinear dielectric microscopy

Yasuo Cho, K. Fujimoto, Y. Hiranaga, Be Liu, Y. Wagatuma, A. Onoe, K. Terabe, K. Kitamura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

We have developed scanning nonlinear dielectric microscopy (SNDM) for observation of ferroelectric polarization distributions range. We also have studied high-density ferroelectric data storage using this microscope. In this study, we selected a stoichiometric (SLT) and a congruent (CLT) lithium tantalate (LiTaO₃) single crystal- thin plates, with 180° C-C domain only, as a specimen. At first, as basic investigation of domain engineering, we revealed the relationship between applied voltages to SLT sample and inverted domain sizes, and also clarified the inverted domain size as a function of voltage applying time. As a result, we succeeded to obtain nano-sized domain inverted dots. These very small nano-domain dots were quite stable with time. Finally, in the CLT single crystal thin plate, whitch is expected that higher-density strage is possible, we performed actual data storage with the density of 1.5 Tbit/inch².

Original language	English
Title of host publication	Proceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
Publisher	IEEE Computer Society
Pages	255-259
Number of pages	5
ISBN (Electronic)	0780375386
DOIs	https://doi.org/10.1109/NANO.2002.1032241
Publication status	Published - 2002
Event	2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 - Washington, United States Duration: 2002 Aug 26 → 2002 Aug 28

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2002-January
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
Country/Territory	United States
City	Washington
Period	02/8/26 → 02/8/28

Keywords

Atomic force microscopy
Dielectric constant
Ferroelectric materials
Laboratories
Magnetic materials
Memory
Polarization
Probes
US Department of Transportation
Voltage

Access to Document

10.1109/NANO.2002.1032241

Cite this

Cho, Y., Fujimoto, K., Hiranaga, Y., Liu, B., Wagatuma, Y., Onoe, A., Terabe, K., & Kitamura, K. (2002). Tbit/inch² ferroelectric data storage using scanning nonlinear dielectric microscopy. In Proceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 (pp. 255-259). Article 1032241 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2002-January). IEEE Computer Society. https://doi.org/10.1109/NANO.2002.1032241

@inproceedings{c7104beaafec4797a0aa3947712f59be,

title = "Tbit/inch2 ferroelectric data storage using scanning nonlinear dielectric microscopy",

abstract = "We have developed scanning nonlinear dielectric microscopy (SNDM) for observation of ferroelectric polarization distributions range. We also have studied high-density ferroelectric data storage using this microscope. In this study, we selected a stoichiometric (SLT) and a congruent (CLT) lithium tantalate (LiTaO3) single crystal- thin plates, with 180° C-C domain only, as a specimen. At first, as basic investigation of domain engineering, we revealed the relationship between applied voltages to SLT sample and inverted domain sizes, and also clarified the inverted domain size as a function of voltage applying time. As a result, we succeeded to obtain nano-sized domain inverted dots. These very small nano-domain dots were quite stable with time. Finally, in the CLT single crystal thin plate, whitch is expected that higher-density strage is possible, we performed actual data storage with the density of 1.5 Tbit/inch2.",

keywords = "Atomic force microscopy, Dielectric constant, Ferroelectric materials, Laboratories, Magnetic materials, Memory, Polarization, Probes, US Department of Transportation, Voltage",

author = "Yasuo Cho and K. Fujimoto and Y. Hiranaga and Be Liu and Y. Wagatuma and A. Onoe and K. Terabe and K. Kitamura",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 ; Conference date: 26-08-2002 Through 28-08-2002",

year = "2002",

doi = "10.1109/NANO.2002.1032241",

language = "English",

series = "Proceedings of the IEEE Conference on Nanotechnology",

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Cho, Y, Fujimoto, K, Hiranaga, Y, Liu, B, Wagatuma, Y, Onoe, A, Terabe, K & Kitamura, K 2002, Tbit/inch² ferroelectric data storage using scanning nonlinear dielectric microscopy. in Proceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002., 1032241, Proceedings of the IEEE Conference on Nanotechnology, vol. 2002-January, IEEE Computer Society, pp. 255-259, 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002, Washington, United States, 02/8/26. https://doi.org/10.1109/NANO.2002.1032241

Tbit/inch² ferroelectric data storage using scanning nonlinear dielectric microscopy. / Cho, Yasuo; Fujimoto, K.; Hiranaga, Y. et al.
Proceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002. IEEE Computer Society, 2002. p. 255-259 1032241 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Fujimoto, K.

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AU - Onoe, A.

AU - Terabe, K.

AU - Kitamura, K.

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AB - We have developed scanning nonlinear dielectric microscopy (SNDM) for observation of ferroelectric polarization distributions range. We also have studied high-density ferroelectric data storage using this microscope. In this study, we selected a stoichiometric (SLT) and a congruent (CLT) lithium tantalate (LiTaO3) single crystal- thin plates, with 180° C-C domain only, as a specimen. At first, as basic investigation of domain engineering, we revealed the relationship between applied voltages to SLT sample and inverted domain sizes, and also clarified the inverted domain size as a function of voltage applying time. As a result, we succeeded to obtain nano-sized domain inverted dots. These very small nano-domain dots were quite stable with time. Finally, in the CLT single crystal thin plate, whitch is expected that higher-density strage is possible, we performed actual data storage with the density of 1.5 Tbit/inch2.

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