TY - JOUR
T1 - TEM and in situ HREM for studying metal-semiconductor interfacial reactions
AU - Sinclair, R.
AU - Konno, T. J.
AU - Hong Ko, D.
PY - 1994
Y1 - 1994
N2 - We have studied the reactions at metal-semiconductor interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solid-state amorphization. For non-reactive systems, crystallization of the semiconductor is often achieved with nucleation and growth mediated by the metal phase. Examples are presented on Ti-Si, Pt-GaAs, Al-Si and Ag-Ge systems.
AB - We have studied the reactions at metal-semiconductor interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solid-state amorphization. For non-reactive systems, crystallization of the semiconductor is often achieved with nucleation and growth mediated by the metal phase. Examples are presented on Ti-Si, Pt-GaAs, Al-Si and Ag-Ge systems.
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U2 - 10.4028/www.scientific.net/msf.155-156.111
DO - 10.4028/www.scientific.net/msf.155-156.111
M3 - Conference article
AN - SCOPUS:0028666386
SN - 0255-5476
VL - 155-5
SP - 111
EP - 120
JO - Materials Science Forum
JF - Materials Science Forum
T2 - Proceedings of the International Meeting on Reactive Phase Formation at Interfaces and Diffusion Processes
Y2 - 21 May 1993 through 28 May 1993
ER -