We have studied the reactions at metal-semiconductor interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solid-state amorphization. For non-reactive systems, crystallization of the semiconductor is often achieved with nucleation and growth mediated by the metal phase. Examples are presented on Ti-Si, Pt-GaAs, Al-Si and Ag-Ge systems.
|Number of pages||10|
|Journal||Materials Science Forum|
|Publication status||Published - 1994|
|Event||Proceedings of the International Meeting on Reactive Phase Formation at Interfaces and Diffusion Processes - Aussois, Fr|
Duration: 1993 May 21 → 1993 May 28