Temperature and applied voltage dependence of magnetoresistance ratio in Fe/Al oxide/Fe junctions

Nobuki Tezuka; Terunobu Miyazaki

doi:10.1143/JJAP.37.L218

Temperature and applied voltage dependence of magnetoresistance ratio in Fe/Al oxide/Fe junctions

Nobuki Tezuka, Terunobu Miyazaki

ENG - Materials Science

Tohoku University

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The tunnel magnetoresistance(TMR) ratio have been investigated in the Fe/Al oxide/Fe junctions, specifically the temperature and applied voltage dependence of the TMR ratio. It was found that the dependence of resistance at saturation magnetization state(R_s) on the applied voltage at 4.2 K is completely anomalous in terms of the expected tunneling behavior. This "zero-bias anomaly" is due to the magnetic impurity in or near the boundary between ferromagnetic electrodes and insulator. The TMR ratio decreased rapidly with increasing temperature. The TMR ratio also decreased when increasing the applied voltage. We discussed the dependence of the TMR ratio on temperature and applied voltage taking into account the impurity assisted tunneling.

Original language	English
Pages (from-to)	L218-L220
Journal	Japanese Journal of Applied Physics
Volume	37
Issue number	2 SUPPL. B
DOIs	https://doi.org/10.1143/JJAP.37.L218
Publication status	Published - 1998 Feb 15

Keywords

Al oxide
Fe
Temperature and applied voltage dependence
Tunnel magnetoresistance effect
Zero bias anomaly

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10.1143/JJAP.37.L218

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title = "Temperature and applied voltage dependence of magnetoresistance ratio in Fe/Al oxide/Fe junctions",

abstract = "The tunnel magnetoresistance(TMR) ratio have been investigated in the Fe/Al oxide/Fe junctions, specifically the temperature and applied voltage dependence of the TMR ratio. It was found that the dependence of resistance at saturation magnetization state(Rs) on the applied voltage at 4.2 K is completely anomalous in terms of the expected tunneling behavior. This {"}zero-bias anomaly{"} is due to the magnetic impurity in or near the boundary between ferromagnetic electrodes and insulator. The TMR ratio decreased rapidly with increasing temperature. The TMR ratio also decreased when increasing the applied voltage. We discussed the dependence of the TMR ratio on temperature and applied voltage taking into account the impurity assisted tunneling.",

keywords = "Al oxide, Fe, Temperature and applied voltage dependence, Tunnel magnetoresistance effect, Zero bias anomaly",

author = "Nobuki Tezuka and Terunobu Miyazaki",

year = "1998",

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doi = "10.1143/JJAP.37.L218",

language = "English",

volume = "37",

pages = "L218--L220",

journal = "Japanese Journal of Applied Physics",

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TY - JOUR

T1 - Temperature and applied voltage dependence of magnetoresistance ratio in Fe/Al oxide/Fe junctions

AU - Tezuka, Nobuki

AU - Miyazaki, Terunobu

PY - 1998/2/15

Y1 - 1998/2/15

N2 - The tunnel magnetoresistance(TMR) ratio have been investigated in the Fe/Al oxide/Fe junctions, specifically the temperature and applied voltage dependence of the TMR ratio. It was found that the dependence of resistance at saturation magnetization state(Rs) on the applied voltage at 4.2 K is completely anomalous in terms of the expected tunneling behavior. This "zero-bias anomaly" is due to the magnetic impurity in or near the boundary between ferromagnetic electrodes and insulator. The TMR ratio decreased rapidly with increasing temperature. The TMR ratio also decreased when increasing the applied voltage. We discussed the dependence of the TMR ratio on temperature and applied voltage taking into account the impurity assisted tunneling.

AB - The tunnel magnetoresistance(TMR) ratio have been investigated in the Fe/Al oxide/Fe junctions, specifically the temperature and applied voltage dependence of the TMR ratio. It was found that the dependence of resistance at saturation magnetization state(Rs) on the applied voltage at 4.2 K is completely anomalous in terms of the expected tunneling behavior. This "zero-bias anomaly" is due to the magnetic impurity in or near the boundary between ferromagnetic electrodes and insulator. The TMR ratio decreased rapidly with increasing temperature. The TMR ratio also decreased when increasing the applied voltage. We discussed the dependence of the TMR ratio on temperature and applied voltage taking into account the impurity assisted tunneling.

KW - Al oxide

KW - Fe

KW - Temperature and applied voltage dependence

KW - Tunnel magnetoresistance effect

KW - Zero bias anomaly

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U2 - 10.1143/JJAP.37.L218

DO - 10.1143/JJAP.37.L218

M3 - Article

AN - SCOPUS:0031999894

SN - 0021-4922

VL - 37

SP - L218-L220

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2 SUPPL. B

ER -

Temperature and applied voltage dependence of magnetoresistance ratio in Fe/Al oxide/Fe junctions

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