Temperature and magnetic field dependence of resistance in ZrN sputtered films

Masahito Yoshizawa, Kôki Ikeda, Naoki Toyota, Tsutomu Yotsuya, Thomas Miiller, Peter Wyder

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The ZrN sputtered films fabricated with various substrate temperatures and nitrogen partial pressures were devided into two groups by the ratio of the resistance at helium and room temperatures. We found a clear boundary and remarkable differences both in the temperature dependence of the resistance and in the magnetoresistance between the two groups. The characteristics of the ZrN films are considered to be due to Anderson localization, though the oscillatory behaviour in the magnetoresistance is not fully understood.

Original languageEnglish
Pages (from-to)293-294
Number of pages2
JournalPhysica B: Physics of Condensed Matter
Issue numberPART 1
Publication statusPublished - 1990 Aug
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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