TY - JOUR
T1 - Temperature and magnetic field dependence of resistance in ZrN sputtered films
AU - Yoshizawa, Masahito
AU - Ikeda, Kôki
AU - Toyota, Naoki
AU - Yotsuya, Tsutomu
AU - Miiller, Thomas
AU - Wyder, Peter
N1 - Funding Information:
Ono of us (M.Y. ) thanks !lax-Pl.arlck-(;c~s~~ I schaf’l for the financial support. w’c arc grat,t‘l’u I 1.0 Dr ,T.Saso ilnd l’rof.S.?lorit.a for the hc\tpful d i sc u s s i0 n s ‘l‘hc: h (’ 11) of’ Fir. I{,K awa/oc’ and ;ulr.T.Kawamura would 1,~ a~~rIr‘,~ciatPti.
PY - 1990/8
Y1 - 1990/8
N2 - The ZrN sputtered films fabricated with various substrate temperatures and nitrogen partial pressures were devided into two groups by the ratio of the resistance at helium and room temperatures. We found a clear boundary and remarkable differences both in the temperature dependence of the resistance and in the magnetoresistance between the two groups. The characteristics of the ZrN films are considered to be due to Anderson localization, though the oscillatory behaviour in the magnetoresistance is not fully understood.
AB - The ZrN sputtered films fabricated with various substrate temperatures and nitrogen partial pressures were devided into two groups by the ratio of the resistance at helium and room temperatures. We found a clear boundary and remarkable differences both in the temperature dependence of the resistance and in the magnetoresistance between the two groups. The characteristics of the ZrN films are considered to be due to Anderson localization, though the oscillatory behaviour in the magnetoresistance is not fully understood.
UR - http://www.scopus.com/inward/record.url?scp=0025465666&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025465666&partnerID=8YFLogxK
U2 - 10.1016/S0921-4526(90)80996-V
DO - 10.1016/S0921-4526(90)80996-V
M3 - Article
AN - SCOPUS:0025465666
SN - 0921-4526
VL - 165-166
SP - 293
EP - 294
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - PART 1
ER -