Temperature dependence of electrical transport and magnetization reversal in magnetic tunnel junction

Chien Tu Chao; Che Chin Chen; Cheng Yi Kuo; Cen Shawn Wu; Lance Horng; Shinji Isogami; Masakiyo Tsunoda; Migaku Takahashi; Jong Ching Wu

doi:10.1109/TMAG.2010.2045354

Temperature dependence of electrical transport and magnetization reversal in magnetic tunnel junction

Chien Tu Chao, Che Chin Chen, Cheng Yi Kuo, Cen Shawn Wu, Lance Horng, Shinji Isogami, Masakiyo Tsunoda, Migaku Takahashi, Jong Ching Wu

Research Center for Green X-Tech

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A series of tunneling magnetoresistance (TMR) has been measured at various temperatures ranging from 4 K to 360 K for characterizing the electrical transport and magnetization reversal of nanostructured magnetic tunnel junctions (MTJs) with thin effective MgO barrier of 1 nm thickness and resistance-area (RA) product of 10 Ω μm². MTJs with 150 × 250 nm ² elliptical shape were fabricated by using electron beam lithography in combination with ion beam milling. Typical TMR curves were observed at temperature above 70 K, below which there was no significant anti-parallel (AP) state revealed. A linear relationship is found between resistance and temperature in both parallel (P) and AP states, having linear coefficients of - 4.15 × 10^-4 and - 8.07 × 10^-4 (Ω/K), respectively. The TMR ratio was found to be proportional to 1-BT^3/2. The negative temperature coefficients and TMR tendency with temperature indicated that electrical transport is dominated mainly by tunneling mechanism. In addition, the biasing field of pinned CoFeB layer due to RKKY coupling increased with decreasing temperature until a maximum biasing field reached at 200 K, after which the biasing field decreased with decreasing temperature.

Original language	English
Article number	5467696
Pages (from-to)	2195-2197
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	46
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2010.2045354
Publication status	Published - 2010 Jun

Keywords

Magnetic tunnel junction
Magnetization reversal
Temperature dependence

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10.1109/TMAG.2010.2045354

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title = "Temperature dependence of electrical transport and magnetization reversal in magnetic tunnel junction",

abstract = "A series of tunneling magnetoresistance (TMR) has been measured at various temperatures ranging from 4 K to 360 K for characterizing the electrical transport and magnetization reversal of nanostructured magnetic tunnel junctions (MTJs) with thin effective MgO barrier of 1 nm thickness and resistance-area (RA) product of 10 Ω μm2. MTJs with 150 × 250 nm 2 elliptical shape were fabricated by using electron beam lithography in combination with ion beam milling. Typical TMR curves were observed at temperature above 70 K, below which there was no significant anti-parallel (AP) state revealed. A linear relationship is found between resistance and temperature in both parallel (P) and AP states, having linear coefficients of - 4.15 × 10-4 and - 8.07 × 10-4 (Ω/K), respectively. The TMR ratio was found to be proportional to 1-BT3/2. The negative temperature coefficients and TMR tendency with temperature indicated that electrical transport is dominated mainly by tunneling mechanism. In addition, the biasing field of pinned CoFeB layer due to RKKY coupling increased with decreasing temperature until a maximum biasing field reached at 200 K, after which the biasing field decreased with decreasing temperature.",

keywords = "Magnetic tunnel junction, Magnetization reversal, Temperature dependence",

author = "Chao, {Chien Tu} and Chen, {Che Chin} and Kuo, {Cheng Yi} and Wu, {Cen Shawn} and Lance Horng and Shinji Isogami and Masakiyo Tsunoda and Migaku Takahashi and Wu, {Jong Ching}",

note = "Funding Information: This work was supported in part by the Ministry of Economic Affairs under Grant 97-EC-17-A-01-S1-026 and in part by the National Science Council under Grant NSC 98-2112-M-018-004-MY3.",

year = "2010",

month = jun,

doi = "10.1109/TMAG.2010.2045354",

language = "English",

volume = "46",

pages = "2195--2197",

journal = "IEEE Transactions on Magnetics",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Temperature dependence of electrical transport and magnetization reversal in magnetic tunnel junction

AU - Chao, Chien Tu

AU - Chen, Che Chin

AU - Kuo, Cheng Yi

AU - Wu, Cen Shawn

AU - Horng, Lance

AU - Isogami, Shinji

AU - Tsunoda, Masakiyo

AU - Takahashi, Migaku

AU - Wu, Jong Ching

N1 - Funding Information: This work was supported in part by the Ministry of Economic Affairs under Grant 97-EC-17-A-01-S1-026 and in part by the National Science Council under Grant NSC 98-2112-M-018-004-MY3.

PY - 2010/6

Y1 - 2010/6

N2 - A series of tunneling magnetoresistance (TMR) has been measured at various temperatures ranging from 4 K to 360 K for characterizing the electrical transport and magnetization reversal of nanostructured magnetic tunnel junctions (MTJs) with thin effective MgO barrier of 1 nm thickness and resistance-area (RA) product of 10 Ω μm2. MTJs with 150 × 250 nm 2 elliptical shape were fabricated by using electron beam lithography in combination with ion beam milling. Typical TMR curves were observed at temperature above 70 K, below which there was no significant anti-parallel (AP) state revealed. A linear relationship is found between resistance and temperature in both parallel (P) and AP states, having linear coefficients of - 4.15 × 10-4 and - 8.07 × 10-4 (Ω/K), respectively. The TMR ratio was found to be proportional to 1-BT3/2. The negative temperature coefficients and TMR tendency with temperature indicated that electrical transport is dominated mainly by tunneling mechanism. In addition, the biasing field of pinned CoFeB layer due to RKKY coupling increased with decreasing temperature until a maximum biasing field reached at 200 K, after which the biasing field decreased with decreasing temperature.

AB - A series of tunneling magnetoresistance (TMR) has been measured at various temperatures ranging from 4 K to 360 K for characterizing the electrical transport and magnetization reversal of nanostructured magnetic tunnel junctions (MTJs) with thin effective MgO barrier of 1 nm thickness and resistance-area (RA) product of 10 Ω μm2. MTJs with 150 × 250 nm 2 elliptical shape were fabricated by using electron beam lithography in combination with ion beam milling. Typical TMR curves were observed at temperature above 70 K, below which there was no significant anti-parallel (AP) state revealed. A linear relationship is found between resistance and temperature in both parallel (P) and AP states, having linear coefficients of - 4.15 × 10-4 and - 8.07 × 10-4 (Ω/K), respectively. The TMR ratio was found to be proportional to 1-BT3/2. The negative temperature coefficients and TMR tendency with temperature indicated that electrical transport is dominated mainly by tunneling mechanism. In addition, the biasing field of pinned CoFeB layer due to RKKY coupling increased with decreasing temperature until a maximum biasing field reached at 200 K, after which the biasing field decreased with decreasing temperature.

KW - Magnetic tunnel junction

KW - Magnetization reversal

KW - Temperature dependence

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JO - IEEE Transactions on Magnetics

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Temperature dependence of electrical transport and magnetization reversal in magnetic tunnel junction

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