Temperature dependence of low frequency noise in magnetic tunneling junctions with Co40Fe40B20/Co70.5Fe4.5Si15B10 composed free layer

Z. Yuan; J. Feng; P. Guo; T. Nakano; S. Ali; X. Han; H. Naganuma; Y. Ando

doi:10.1109/INTMAG.2015.7157499

Temperature dependence of low frequency noise in magnetic tunneling junctions with Co₄₀Fe₄₀B₂₀/Co_70.5Fe_4.5Si₁₅B₁₀ composed free layer

Z. Yuan, J. Feng, P. Guo, T. Nakano, S. Ali, X. Han, H. Naganuma, Y. Ando

ENG - Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Magnetic tunneling junctions (MTJ) have been widely used in magnetic random access memory (MRAM) and magnetic sensors for the large magnetoresistance (TMR). [1, 2] One of the major issues for high sensitivity sensors is to obtain a low switching field (H_sw). Recently various ferromagnetic metals with low H_sw, such as NiFe [3, 4] and amorphous CoFeSiB [5], have been selected as the sensing layer in MTJ sensors. Moreover, CoFeSiB has a lower saturation magnetization, which is also beneficial for reducing H_sw. [6] With CoFeSiB as the sensing layer, the sensitivity up to 40%/Oe has been achieved in MTJ sensors. [5] Besides the high sensitivity, the noise level of the sensor devices in the low frequency regime is an important parameter, and nanotesla-scaled detectivity has been achieved in MTJ sensors. In this work, the low frequency noise in MTJs with CoFeB/CoFeSiB composed free layer has been studied.

Original language	English
Title of host publication	2015 IEEE International Magnetics Conference, INTERMAG 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479973224
DOIs	https://doi.org/10.1109/INTMAG.2015.7157499
Publication status	Published - 2015 Jul 14
Event	2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China Duration: 2015 May 11 → 2015 May 15

Publication series

Name	2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other	2015 IEEE International Magnetics Conference, INTERMAG 2015
Country/Territory	China
City	Beijing
Period	15/5/11 → 15/5/15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films

Access to Document

10.1109/INTMAG.2015.7157499

Cite this

Yuan, Z., Feng, J., Guo, P., Nakano, T., Ali, S., Han, X., Naganuma, H., & Ando, Y. (2015). Temperature dependence of low frequency noise in magnetic tunneling junctions with Co₄₀Fe₄₀B₂₀/Co_70.5Fe_4.5Si₁₅B₁₀ composed free layer. In 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7157499] (2015 IEEE International Magnetics Conference, INTERMAG 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7157499

Temperature dependence of low frequency noise in magnetic tunneling junctions with Co₄₀Fe₄₀B₂₀/Co_70.5Fe_4.5Si₁₅B₁₀ composed free layer. / Yuan, Z.; Feng, J.; Guo, P. et al.

2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7157499 (2015 IEEE International Magnetics Conference, INTERMAG 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yuan, Z, Feng, J, Guo, P, Nakano, T, Ali, S, Han, X, Naganuma, H & Ando, Y 2015, Temperature dependence of low frequency noise in magnetic tunneling junctions with Co₄₀Fe₄₀B₂₀/Co_70.5Fe_4.5Si₁₅B₁₀ composed free layer. in 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7157499, 2015 IEEE International Magnetics Conference, INTERMAG 2015, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, China, 15/5/11. https://doi.org/10.1109/INTMAG.2015.7157499

Yuan Z, Feng J, Guo P, Nakano T, Ali S, Han X et al. Temperature dependence of low frequency noise in magnetic tunneling junctions with Co₄₀Fe₄₀B₂₀/Co_70.5Fe_4.5Si₁₅B₁₀ composed free layer. In 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7157499. (2015 IEEE International Magnetics Conference, INTERMAG 2015). doi: 10.1109/INTMAG.2015.7157499

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title = "Temperature dependence of low frequency noise in magnetic tunneling junctions with Co40Fe40B20/Co70.5Fe4.5Si15B10 composed free layer",

abstract = "Magnetic tunneling junctions (MTJ) have been widely used in magnetic random access memory (MRAM) and magnetic sensors for the large magnetoresistance (TMR). [1, 2] One of the major issues for high sensitivity sensors is to obtain a low switching field (Hsw). Recently various ferromagnetic metals with low Hsw, such as NiFe [3, 4] and amorphous CoFeSiB [5], have been selected as the sensing layer in MTJ sensors. Moreover, CoFeSiB has a lower saturation magnetization, which is also beneficial for reducing Hsw. [6] With CoFeSiB as the sensing layer, the sensitivity up to 40%/Oe has been achieved in MTJ sensors. [5] Besides the high sensitivity, the noise level of the sensor devices in the low frequency regime is an important parameter, and nanotesla-scaled detectivity has been achieved in MTJ sensors. In this work, the low frequency noise in MTJs with CoFeB/CoFeSiB composed free layer has been studied.",

author = "Z. Yuan and J. Feng and P. Guo and T. Nakano and S. Ali and X. Han and H. Naganuma and Y. Ando",

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AU - Yuan, Z.

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AU - Nakano, T.

AU - Ali, S.

AU - Han, X.

AU - Naganuma, H.

AU - Ando, Y.

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N2 - Magnetic tunneling junctions (MTJ) have been widely used in magnetic random access memory (MRAM) and magnetic sensors for the large magnetoresistance (TMR). [1, 2] One of the major issues for high sensitivity sensors is to obtain a low switching field (Hsw). Recently various ferromagnetic metals with low Hsw, such as NiFe [3, 4] and amorphous CoFeSiB [5], have been selected as the sensing layer in MTJ sensors. Moreover, CoFeSiB has a lower saturation magnetization, which is also beneficial for reducing Hsw. [6] With CoFeSiB as the sensing layer, the sensitivity up to 40%/Oe has been achieved in MTJ sensors. [5] Besides the high sensitivity, the noise level of the sensor devices in the low frequency regime is an important parameter, and nanotesla-scaled detectivity has been achieved in MTJ sensors. In this work, the low frequency noise in MTJs with CoFeB/CoFeSiB composed free layer has been studied.

AB - Magnetic tunneling junctions (MTJ) have been widely used in magnetic random access memory (MRAM) and magnetic sensors for the large magnetoresistance (TMR). [1, 2] One of the major issues for high sensitivity sensors is to obtain a low switching field (Hsw). Recently various ferromagnetic metals with low Hsw, such as NiFe [3, 4] and amorphous CoFeSiB [5], have been selected as the sensing layer in MTJ sensors. Moreover, CoFeSiB has a lower saturation magnetization, which is also beneficial for reducing Hsw. [6] With CoFeSiB as the sensing layer, the sensitivity up to 40%/Oe has been achieved in MTJ sensors. [5] Besides the high sensitivity, the noise level of the sensor devices in the low frequency regime is an important parameter, and nanotesla-scaled detectivity has been achieved in MTJ sensors. In this work, the low frequency noise in MTJs with CoFeB/CoFeSiB composed free layer has been studied.

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