Temperature dependence of the spin tunneling magnetoresistive effect on NiFe/Co/Al2O3/Co/NiFe/FeMn junctions

Seiji Kumagai; Nobuki Tezuka; Terunobu Miyazaki

doi:10.1143/jjap.36.l1498

Temperature dependence of the spin tunneling magnetoresistive effect on NiFe/Co/Al₂O₃/Co/NiFe/FeMn junctions

Seiji Kumagai, Nobuki Tezuka, Terunobu Miyazaki

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Spin-valve type spin tunneling junctions using contact metal masks have been fabricated. The annealing effect and temperature dependence of the tunneling magnetoresistance (TMR) ratio and saturated resistance (R_s) have been investigated. As-prepared NiFe/Co/Al₂O₃/Co/NiFe/FeMn junctions show a spin-valve like MR curve and a TMR ratio of up to 28% at room temperature. The temperature dependence of the TMR ratio and R_s is affected by the annealing. For annealed junction, the TMR ratio slightly decreases with increasing temperature and rapidly decreases around 418 K because of the disappearance of an exchange bias of the FeMn layer.

Original language	English
Pages (from-to)	L1498-L1500
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	11 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.36.l1498
Publication status	Published - 1997 Nov 15

Keywords

Contact metal mask
Spin tunneling magnetoresistive effect
Spin-valve
Temperature dependence
Tunneling magnetoresistance ratio

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.36.l1498

Cite this

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title = "Temperature dependence of the spin tunneling magnetoresistive effect on NiFe/Co/Al2O3/Co/NiFe/FeMn junctions",

abstract = "Spin-valve type spin tunneling junctions using contact metal masks have been fabricated. The annealing effect and temperature dependence of the tunneling magnetoresistance (TMR) ratio and saturated resistance (Rs) have been investigated. As-prepared NiFe/Co/Al2O3/Co/NiFe/FeMn junctions show a spin-valve like MR curve and a TMR ratio of up to 28% at room temperature. The temperature dependence of the TMR ratio and Rs is affected by the annealing. For annealed junction, the TMR ratio slightly decreases with increasing temperature and rapidly decreases around 418 K because of the disappearance of an exchange bias of the FeMn layer.",

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T1 - Temperature dependence of the spin tunneling magnetoresistive effect on NiFe/Co/Al2O3/Co/NiFe/FeMn junctions

AU - Kumagai, Seiji

AU - Tezuka, Nobuki

AU - Miyazaki, Terunobu

PY - 1997/11/15

Y1 - 1997/11/15

N2 - Spin-valve type spin tunneling junctions using contact metal masks have been fabricated. The annealing effect and temperature dependence of the tunneling magnetoresistance (TMR) ratio and saturated resistance (Rs) have been investigated. As-prepared NiFe/Co/Al2O3/Co/NiFe/FeMn junctions show a spin-valve like MR curve and a TMR ratio of up to 28% at room temperature. The temperature dependence of the TMR ratio and Rs is affected by the annealing. For annealed junction, the TMR ratio slightly decreases with increasing temperature and rapidly decreases around 418 K because of the disappearance of an exchange bias of the FeMn layer.

AB - Spin-valve type spin tunneling junctions using contact metal masks have been fabricated. The annealing effect and temperature dependence of the tunneling magnetoresistance (TMR) ratio and saturated resistance (Rs) have been investigated. As-prepared NiFe/Co/Al2O3/Co/NiFe/FeMn junctions show a spin-valve like MR curve and a TMR ratio of up to 28% at room temperature. The temperature dependence of the TMR ratio and Rs is affected by the annealing. For annealed junction, the TMR ratio slightly decreases with increasing temperature and rapidly decreases around 418 K because of the disappearance of an exchange bias of the FeMn layer.

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KW - Spin tunneling magnetoresistive effect

KW - Spin-valve

KW - Temperature dependence

KW - Tunneling magnetoresistance ratio

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