Temperature dependence of tunnel magnetoresistance and magnetization of IrMn based MTJ

P. Wiśniowski, T. Stobiecki, M. Czapkiewicz, J. Wrona, M. Rams, C. G. Kim, C. O. Kim, Y. K. Hu, M. Tsunoda, M. Takahashi

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The temperature dependence of spin-polarized tunnel magnetoresistance (TMR) is investigated between 30 K and 300 K for annealed junctions with the structure of Ta(5)/Cu(10)/Ta(5)/NiFe(2)/Cu(5)/IrMn(10)/ CoFe(2.5)/Al 2O3(1.5)/CoFe(2.5)/NiFe(t)/Ta(5), where t = 10 and 100 nm. For the junction (t = 100 nm) annealed in 270°C we were able to separate electron polarization spin-dependent and spin-independent contributions of TMR temperature dependence. The thermally spin waves excitation constants determined from temperature dependence of magnetization and polarization are comparable. For junction with t = 10 nm annealed in 300°C electron spin polarization conductance is small in comparison to high conductance via trapped states, which arises from defects and magnetic impurities diffusion.

Original languageEnglish
Pages (from-to)1648-1652
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Issue number8
Publication statusPublished - 2004 Jun


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