Temperature dependences of acceptor concentration, conductivity mobility, and resistivity of Ga-doped czochralski-si crystals

Takeshi Hoshikawa; Toshinori Taishi; Keigo Hoshikawa; Ichiro Yonenaga; Satoshi Uda

doi:10.1143/JJAP.48.031102

Temperature dependences of acceptor concentration, conductivity mobility, and resistivity of Ga-doped czochralski-si crystals

Takeshi Hoshikawa, Toshinori Taishi, Keigo Hoshikawa, Ichiro Yonenaga, Satoshi Uda

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The temperature dependences of acceptor concentration n_A, conductivity mobility μ_C, and resistivity ρ of gallium (Ga)-doped Czochralski (CZ)-silicon (Si) crystals were studied in the temperature range from 220 to 360 K (-53 to 87°C). Crystals with Ga concentration N_a from 6.1 × 10¹⁴ to 2.0 × 10¹⁸ atoms/cm³ were analyzed by Hall-effect measurements using the van der Pauw method in the temperature range from 80 to 360 K. The temperature dependences of n_A and ρ of crystals with less than 10¹⁶ atoms/cm³ showed the same trends as those of B-doped p-type Si crystals, while those of crystals with more than 10¹⁶ atoms/cm³ differed from those of B-doped crystals, mainly because the temperature dependence of n_a is not in the saturation range and the degree of ionization n_a/N_a decreases with decreasing temperature from 360 to 220 K.

Original language	English
Number of pages	1
Journal	Japanese journal of applied physics
Volume	48
Issue number	3
DOIs	https://doi.org/10.1143/JJAP.48.031102
Publication status	Published - 2009 Mar 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Temperature dependences of acceptor concentration, conductivity mobility, and resistivity of Ga-doped czochralski-si crystals",

abstract = "The temperature dependences of acceptor concentration nA, conductivity mobility μC, and resistivity ρ of gallium (Ga)-doped Czochralski (CZ)-silicon (Si) crystals were studied in the temperature range from 220 to 360 K (-53 to 87°C). Crystals with Ga concentration Na from 6.1 × 1014 to 2.0 × 1018 atoms/cm3 were analyzed by Hall-effect measurements using the van der Pauw method in the temperature range from 80 to 360 K. The temperature dependences of nA and ρ of crystals with less than 1016 atoms/cm3 showed the same trends as those of B-doped p-type Si crystals, while those of crystals with more than 1016 atoms/cm3 differed from those of B-doped crystals, mainly because the temperature dependence of na is not in the saturation range and the degree of ionization na/Na decreases with decreasing temperature from 360 to 220 K.",

author = "Takeshi Hoshikawa and Toshinori Taishi and Keigo Hoshikawa and Ichiro Yonenaga and Satoshi Uda",

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T1 - Temperature dependences of acceptor concentration, conductivity mobility, and resistivity of Ga-doped czochralski-si crystals

AU - Hoshikawa, Takeshi

AU - Taishi, Toshinori

AU - Hoshikawa, Keigo

AU - Yonenaga, Ichiro

AU - Uda, Satoshi

PY - 2009/3/1

Y1 - 2009/3/1

N2 - The temperature dependences of acceptor concentration nA, conductivity mobility μC, and resistivity ρ of gallium (Ga)-doped Czochralski (CZ)-silicon (Si) crystals were studied in the temperature range from 220 to 360 K (-53 to 87°C). Crystals with Ga concentration Na from 6.1 × 1014 to 2.0 × 1018 atoms/cm3 were analyzed by Hall-effect measurements using the van der Pauw method in the temperature range from 80 to 360 K. The temperature dependences of nA and ρ of crystals with less than 1016 atoms/cm3 showed the same trends as those of B-doped p-type Si crystals, while those of crystals with more than 1016 atoms/cm3 differed from those of B-doped crystals, mainly because the temperature dependence of na is not in the saturation range and the degree of ionization na/Na decreases with decreasing temperature from 360 to 220 K.

AB - The temperature dependences of acceptor concentration nA, conductivity mobility μC, and resistivity ρ of gallium (Ga)-doped Czochralski (CZ)-silicon (Si) crystals were studied in the temperature range from 220 to 360 K (-53 to 87°C). Crystals with Ga concentration Na from 6.1 × 1014 to 2.0 × 1018 atoms/cm3 were analyzed by Hall-effect measurements using the van der Pauw method in the temperature range from 80 to 360 K. The temperature dependences of nA and ρ of crystals with less than 1016 atoms/cm3 showed the same trends as those of B-doped p-type Si crystals, while those of crystals with more than 1016 atoms/cm3 differed from those of B-doped crystals, mainly because the temperature dependence of na is not in the saturation range and the degree of ionization na/Na decreases with decreasing temperature from 360 to 220 K.

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Temperature dependences of acceptor concentration, conductivity mobility, and resistivity of Ga-doped czochralski-si crystals

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