Temperature effects in reverse-type avalanche photodiodes

Mitsuhiro Sato; Takayuki Yanagida; Akira Yoshikawa; Yoichi Yatsu; Jun Kataoka; Fumio Saito

doi:10.1109/NSSMIC.2007.4437281

Temperature effects in reverse-type avalanche photodiodes

Mitsuhiro Sato, Takayuki Yanagida, Akira Yoshikawa, Yoichi Yatsu, Jun Kataoka, Fumio Saito

IMR - Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

These The present paper shows ionization coefficient ratios, k-values, k₁ and k_eff, of reverse-type Si avalanche photodiode. Both of k_eff and k₁, tend to increase when APDs are cooled down. The results for k_eff are 0.0023 ± 0.0002 at 20 °C, 0.0027 ± 0.0003 at 0 °C, and 0.0049 ±0.0007 at -20 °C. With the result of k₁, temperature dependency of k-values Indicates mean free paths of the carriers for phonon scattering shows different temperature dependency, which is considered to reflect the inner structure of APDs.

Original language	English
Title of host publication	2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
Pages	1491-1493
Number of pages	3
DOIs	https://doi.org/10.1109/NSSMIC.2007.4437281
Publication status	Published - 2007
Event	2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC - Honolulu, HI, United States Duration: 2007 Oct 27 → 2007 Nov 3

Publication series

Name	IEEE Nuclear Science Symposium Conference Record
Volume	2
ISSN (Print)	1095-7863

Conference

Conference	2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
Country/Territory	United States
City	Honolulu, HI
Period	07/10/27 → 07/11/3

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10.1109/NSSMIC.2007.4437281

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title = "Temperature effects in reverse-type avalanche photodiodes",

abstract = "These The present paper shows ionization coefficient ratios, k-values, k1 and keff, of reverse-type Si avalanche photodiode. Both of keff and k1, tend to increase when APDs are cooled down. The results for keff are 0.0023 ± 0.0002 at 20 °C, 0.0027 ± 0.0003 at 0 °C, and 0.0049 ±0.0007 at -20 °C. With the result of k1, temperature dependency of k-values Indicates mean free paths of the carriers for phonon scattering shows different temperature dependency, which is considered to reflect the inner structure of APDs.",

author = "Mitsuhiro Sato and Takayuki Yanagida and Akira Yoshikawa and Yoichi Yatsu and Jun Kataoka and Fumio Saito",

year = "2007",

doi = "10.1109/NSSMIC.2007.4437281",

language = "English",

isbn = "1424409233",

series = "IEEE Nuclear Science Symposium Conference Record",

pages = "1491--1493",

booktitle = "2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC",

note = "2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC ; Conference date: 27-10-2007 Through 03-11-2007",

}

Sato, M, Yanagida, T, Yoshikawa, A, Yatsu, Y, Kataoka, J & Saito, F 2007, Temperature effects in reverse-type avalanche photodiodes. in 2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC., 4437281, IEEE Nuclear Science Symposium Conference Record, vol. 2, pp. 1491-1493, 2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC, Honolulu, HI, United States, 07/10/27. https://doi.org/10.1109/NSSMIC.2007.4437281

Temperature effects in reverse-type avalanche photodiodes. / Sato, Mitsuhiro; Yanagida, Takayuki; Yoshikawa, Akira et al.
2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC. 2007. p. 1491-1493 4437281 (IEEE Nuclear Science Symposium Conference Record; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Temperature effects in reverse-type avalanche photodiodes

AU - Sato, Mitsuhiro

AU - Yanagida, Takayuki

AU - Yoshikawa, Akira

AU - Yatsu, Yoichi

AU - Kataoka, Jun

AU - Saito, Fumio

PY - 2007

Y1 - 2007

N2 - These The present paper shows ionization coefficient ratios, k-values, k1 and keff, of reverse-type Si avalanche photodiode. Both of keff and k1, tend to increase when APDs are cooled down. The results for keff are 0.0023 ± 0.0002 at 20 °C, 0.0027 ± 0.0003 at 0 °C, and 0.0049 ±0.0007 at -20 °C. With the result of k1, temperature dependency of k-values Indicates mean free paths of the carriers for phonon scattering shows different temperature dependency, which is considered to reflect the inner structure of APDs.

AB - These The present paper shows ionization coefficient ratios, k-values, k1 and keff, of reverse-type Si avalanche photodiode. Both of keff and k1, tend to increase when APDs are cooled down. The results for keff are 0.0023 ± 0.0002 at 20 °C, 0.0027 ± 0.0003 at 0 °C, and 0.0049 ±0.0007 at -20 °C. With the result of k1, temperature dependency of k-values Indicates mean free paths of the carriers for phonon scattering shows different temperature dependency, which is considered to reflect the inner structure of APDs.

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DO - 10.1109/NSSMIC.2007.4437281

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SN - 9781424409235

T3 - IEEE Nuclear Science Symposium Conference Record

SP - 1491

EP - 1493

BT - 2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC

T2 - 2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC

Y2 - 27 October 2007 through 3 November 2007

ER -

Temperature effects in reverse-type avalanche photodiodes

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