Abstract
We have developed a laser molecular beam epitaxy system capable of the temperature-gradient and/or composition-spread integration of thin films in a substrate. The latter is achieved by using a moving mask system synchronizing with target exchange and laser pulse. The former employs a substrate holder having a controlled asymmetric thermal conduction heated by a focused Nd:YAG continuous wave laser beam. A concurrent x-ray diffractometer can immediately characterize the dependences of the lattice constant and crystalline quality on the film growth temperature and composition. The temperature-gradient method is very useful for revealing an optimum substrate temperature for epitaxial thin film growth. Several other characterization techniques such as magnetic field microscope and parallel transport measurement system developed for characterizing composition-spread thin films are presented.
| Original language | English |
|---|---|
| Pages (from-to) | 17-26 |
| Number of pages | 10 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4281 |
| DOIs | |
| Publication status | Published - 2001 |
Keywords
- Combinatorial laser MBE
- Combinatorial materials science
- Composition-spread
- Concurrent XRD
- Epitaxial thin film
- Oxide film
- Scanning SQUID microscope
- Temperature-gradient