TY - JOUR
T1 - "Temperature oscillation" as a real-time monitoring of the growth of 3C-SiC on Si substrate
AU - Saito, Eiji
AU - Konno, Atsushi
AU - Ito, Takashi
AU - Yasui, Kanji
AU - Nakazawa, Hideki
AU - Endoh, Tetsuo
AU - Narita, Yuzuru
AU - Suemitsu, Maki
PY - 2008/7/30
Y1 - 2008/7/30
N2 - Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C-SiC on Si substrate using monomethyl silane. The period of the "temperature oscillation" is shown to correspond to λ/2n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C-SiC film on Si substrates.
AB - Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C-SiC on Si substrate using monomethyl silane. The period of the "temperature oscillation" is shown to correspond to λ/2n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C-SiC film on Si substrates.
KW - 3C-SiC
KW - GSMBE
KW - Heteroepitaxy
KW - Pyrometric interferometry
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U2 - 10.1016/j.apsusc.2008.02.190
DO - 10.1016/j.apsusc.2008.02.190
M3 - Article
AN - SCOPUS:45049086597
SN - 0169-4332
VL - 254
SP - 6235
EP - 6237
JO - Applied Surface Science
JF - Applied Surface Science
IS - 19
ER -