Temperature-programmed desorption observation of graphene-on-silicon process

Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

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15 Citations (Scopus)


With its industrial adaptability, graphene-on-silicon (GOS), formed by ultrahigh-vacuum annealing of a SiC thin film on a silicon substrate, is attracting recent attention. Little is known, however, about the growth mechanism of GOS. We demonstrate in this paper that temperatureprogrammed- desorption spectroscopy of deuterium (D2-TPD) can be a powerful in-situ probe to investigate the surface chemistry during formation of epitaxial graphene (EG) on SiC crystals. Using the D2-TPD, the surface stoichiometry and the back-bonds of the surface atoms, including their dependence on the crystallographic orientations [Si(111), Si(100), and Si(110)] can be obtained. Difference in the growth mechanism of GOS among the orientations is discussed based on the results.

Original languageEnglish
Article number070102
JournalJapanese journal of applied physics
Issue number7 PART 1
Publication statusPublished - 2011 Jul

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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