TY - JOUR
T1 - Temperature-programmed desorption observation of graphene-on-silicon process
AU - Abe, Shunsuke
AU - Handa, Hiroyuki
AU - Takahashi, Ryota
AU - Imaizumi, Kei
AU - Fukidome, Hirokazu
AU - Suemitsu, Maki
PY - 2011/7
Y1 - 2011/7
N2 - With its industrial adaptability, graphene-on-silicon (GOS), formed by ultrahigh-vacuum annealing of a SiC thin film on a silicon substrate, is attracting recent attention. Little is known, however, about the growth mechanism of GOS. We demonstrate in this paper that temperatureprogrammed- desorption spectroscopy of deuterium (D2-TPD) can be a powerful in-situ probe to investigate the surface chemistry during formation of epitaxial graphene (EG) on SiC crystals. Using the D2-TPD, the surface stoichiometry and the back-bonds of the surface atoms, including their dependence on the crystallographic orientations [Si(111), Si(100), and Si(110)] can be obtained. Difference in the growth mechanism of GOS among the orientations is discussed based on the results.
AB - With its industrial adaptability, graphene-on-silicon (GOS), formed by ultrahigh-vacuum annealing of a SiC thin film on a silicon substrate, is attracting recent attention. Little is known, however, about the growth mechanism of GOS. We demonstrate in this paper that temperatureprogrammed- desorption spectroscopy of deuterium (D2-TPD) can be a powerful in-situ probe to investigate the surface chemistry during formation of epitaxial graphene (EG) on SiC crystals. Using the D2-TPD, the surface stoichiometry and the back-bonds of the surface atoms, including their dependence on the crystallographic orientations [Si(111), Si(100), and Si(110)] can be obtained. Difference in the growth mechanism of GOS among the orientations is discussed based on the results.
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U2 - 10.1143/JJAP.50.070102
DO - 10.1143/JJAP.50.070102
M3 - Article
AN - SCOPUS:79960696494
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 7 PART 1
M1 - 070102
ER -