TY - GEN
T1 - Temporary Bonding and De-Bonding for Multichip-to-Wafer 3D Integration Process Using Spin-on Glass and Hydrogenated Amorphous Si
AU - Murugesan, M.
AU - Fukushima, T.
AU - Koyanagi, Mitsumasa
N1 - Funding Information:
ACKNOWLEDGMENT Part of this work was performed at the Junichi Nishizawa Research Center and Micro/Nano-machining research and education Center (MNC) at Tohoku University, Japan. We would like to thank all the staff members of GINTI (Global INTegration Initiative) for their great help in carrying out 3D-integaration processes. Authors thank Dr. Hideto Hashiguchi for his help in preparing samples. The authors also thank Prof. H. Nohira of Tokyo City University and Dr. Eiji Ikenaga of JASRI for their immense help in carrying out HXPES measurements.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/8/1
Y1 - 2017/8/1
N2 - Temporary bonding and de-bonding techniques using respectively spin-on glass (SOG) and hydrogenated amorphous-Si (a-Si:H) have been examined for multichip-to-wafer three-dimensional (3D) integration process. In this study, a 280 um-thick known good dies of 5 mm × 5 mm in size were temporarily bonded to a pre-deposited (a-Si:H (100 nm) and SOG (400 nm)) support glass wafer. After completing the die thinning and TSV formation processes, the dies were de-bonded using 248 nm excimer laser. The surfaces of de-bonded chip/wafer and glass substrate were meticulously investigated using x-ray photoelectron spectroscopy (XPS). From C1s, O1s, and Si1s XPS data, it is inferred that the de-bonding occurs in the a-Si:H layer. It reveals that the interface between the SOG and a-Si:H layer was highly intact, and the bonding strength is good enough to withstand the harsh environment during die/wafer thinning and TSV formation processes.
AB - Temporary bonding and de-bonding techniques using respectively spin-on glass (SOG) and hydrogenated amorphous-Si (a-Si:H) have been examined for multichip-to-wafer three-dimensional (3D) integration process. In this study, a 280 um-thick known good dies of 5 mm × 5 mm in size were temporarily bonded to a pre-deposited (a-Si:H (100 nm) and SOG (400 nm)) support glass wafer. After completing the die thinning and TSV formation processes, the dies were de-bonded using 248 nm excimer laser. The surfaces of de-bonded chip/wafer and glass substrate were meticulously investigated using x-ray photoelectron spectroscopy (XPS). From C1s, O1s, and Si1s XPS data, it is inferred that the de-bonding occurs in the a-Si:H layer. It reveals that the interface between the SOG and a-Si:H layer was highly intact, and the bonding strength is good enough to withstand the harsh environment during die/wafer thinning and TSV formation processes.
KW - A-Si:H
KW - SOG
KW - XPS
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U2 - 10.1109/ECTC.2017.253
DO - 10.1109/ECTC.2017.253
M3 - Conference contribution
AN - SCOPUS:85028071602
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1237
EP - 1242
BT - Proceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 67th IEEE Electronic Components and Technology Conference, ECTC 2017
Y2 - 30 May 2017 through 2 June 2017
ER -