@inproceedings{3db2f319c1ff41229c64d6fe29a716e3,
title = "Temporary SiC-SiC wafer bonding compatible with high temperature annealing",
abstract = "A temporary wafer bonding of SiC-SiC compatible with rapid thermal annealing at ∼1000 °C has been developed. An intermediate Ni nano-layer was employed to realize a strong and seamless bonding of two SiC wafers at room temperature without additional pressure. By the rapid thermal annealing process, the interface strength was remarkably decreased and the de-bonding could be achieved at the annealed interface. Interface analyses were carried out to investigate the mechanisms of both bonding and de-bonding. Further development of this temporary bonding technology is expected to be able to make the fabrication of thin SiC device compatible with the common rapid thermal annealing process.",
keywords = "Interface, SiC, Temporary, Thin SiC device, Wafer bonding",
author = "Fengwen Mu and Tadatomo Suga and Miyuki Uomoto and Takehito Shimatsu",
note = "Funding Information: ACKNOWLEDGMENT This research was conducted under a contract of R&D for Expansion of Radio Wave Resources, organized by the Ministry of Internal Affairs and Communications, Japan. Publisher Copyright: {\textcopyright} 2019 IEEE.; 69th IEEE Electronic Components and Technology Conference, ECTC 2019 ; Conference date: 28-05-2019 Through 31-05-2019",
year = "2019",
month = may,
doi = "10.1109/ECTC.2019.00155",
language = "English",
series = "Proceedings - Electronic Components and Technology Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "989--994",
booktitle = "Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019",
address = "United States",
}