Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300K. For the lowest temperatures, a resonant response was observed. The resonances were interpreted as plasma wave excitations in gated two-dimensional electron gas. Non-resonant detection was observed at temperatures above 100K. Estimates for noise equivalent power show that these transistors can be used as efficient detectors of terahertz radiation at cryogenic and room temperatures.
|Number of pages||3|
|Publication status||Published - 2006|
ASJC Scopus subject areas
- Electrical and Electronic Engineering