Terahertz detection by GaN/AlGaN transistors

A. El Fatimy; S. Boubanga Tombet; F. Teppe; W. Knap; D. B. Veksler; S. Rumyantsev; M. S. Shur; N. Pala; R. Gaska; Q. Fareed; X. Hu; D. Seliuta; G. Valusis; C. Gaquiere; D. Theron; A. Cappy

doi:10.1049/el:20062452

Terahertz detection by GaN/AlGaN transistors

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, A. Cappy

Research output: Contribution to journal › Article › peer-review

105 Citations (Scopus)

Abstract

Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300K. For the lowest temperatures, a resonant response was observed. The resonances were interpreted as plasma wave excitations in gated two-dimensional electron gas. Non-resonant detection was observed at temperatures above 100K. Estimates for noise equivalent power show that these transistors can be used as efficient detectors of terahertz radiation at cryogenic and room temperatures.

Original language	English
Pages (from-to)	1342-1344
Number of pages	3
Journal	Electronics Letters
Volume	42
Issue number	23
DOIs	https://doi.org/10.1049/el:20062452
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20062452

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@article{9cff7f7e47c84ef789c3df7cc3b06f2a,

title = "Terahertz detection by GaN/AlGaN transistors",

abstract = "Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300K. For the lowest temperatures, a resonant response was observed. The resonances were interpreted as plasma wave excitations in gated two-dimensional electron gas. Non-resonant detection was observed at temperatures above 100K. Estimates for noise equivalent power show that these transistors can be used as efficient detectors of terahertz radiation at cryogenic and room temperatures.",

author = "{El Fatimy}, A. and {Boubanga Tombet}, S. and F. Teppe and W. Knap and Veksler, {D. B.} and S. Rumyantsev and Shur, {M. S.} and N. Pala and R. Gaska and Q. Fareed and X. Hu and D. Seliuta and G. Valusis and C. Gaquiere and D. Theron and A. Cappy",

note = "Funding Information: I wish to thank Drs. Hymie Anisman of Carleton University and R.G. Weisman of Queen{\textquoteright}s University for their valuable assistancei n the preparation of this manuscript. Supported by grants from the Medical Research Council and the Ontario Ministry of Health.",

year = "2006",

doi = "10.1049/el:20062452",

language = "English",

volume = "42",

pages = "1342--1344",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "23",

}

TY - JOUR

T1 - Terahertz detection by GaN/AlGaN transistors

AU - El Fatimy, A.

AU - Boubanga Tombet, S.

AU - Teppe, F.

AU - Knap, W.

AU - Veksler, D. B.

AU - Rumyantsev, S.

AU - Shur, M. S.

AU - Pala, N.

AU - Gaska, R.

AU - Fareed, Q.

AU - Hu, X.

AU - Seliuta, D.

AU - Valusis, G.

AU - Gaquiere, C.

AU - Theron, D.

AU - Cappy, A.

N1 - Funding Information: I wish to thank Drs. Hymie Anisman of Carleton University and R.G. Weisman of Queen’s University for their valuable assistancei n the preparation of this manuscript. Supported by grants from the Medical Research Council and the Ontario Ministry of Health.

PY - 2006

Y1 - 2006

N2 - Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300K. For the lowest temperatures, a resonant response was observed. The resonances were interpreted as plasma wave excitations in gated two-dimensional electron gas. Non-resonant detection was observed at temperatures above 100K. Estimates for noise equivalent power show that these transistors can be used as efficient detectors of terahertz radiation at cryogenic and room temperatures.

AB - Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300K. For the lowest temperatures, a resonant response was observed. The resonances were interpreted as plasma wave excitations in gated two-dimensional electron gas. Non-resonant detection was observed at temperatures above 100K. Estimates for noise equivalent power show that these transistors can be used as efficient detectors of terahertz radiation at cryogenic and room temperatures.

UR - http://www.scopus.com/inward/record.url?scp=33750916727&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750916727&partnerID=8YFLogxK

U2 - 10.1049/el:20062452

DO - 10.1049/el:20062452

M3 - Article

AN - SCOPUS:33750916727

SN - 0013-5194

VL - 42

SP - 1342

EP - 1344

JO - Electronics Letters

JF - Electronics Letters

IS - 23

ER -

Terahertz detection by GaN/AlGaN transistors

Abstract

ASJC Scopus subject areas

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