Terahertz emission and detection in double-graphene-layer structures

Taiichi Otsuji, Vladimir Y. Aleshkin, Alexander A. Dubinov, Maxim Ryzhii, Vladimir Mitin, Michael S. Shur, Victor Ryzhii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Double-graphene-layer (D-GL) heterostructures with thin inter-GL barrier Boron Nitride (h-BN), Tungsten Disulfide (WS2), and other barrier layers (see, for example, [1]) have recently attracted much attention due to their potential applications in high speed modulators of terahertz (THz) and infrared (IR) radiation, transistors, and THz photomixers. In this work, we demonstrate that the photon-assisted resonant radiative inter-GL transitions enable the applications of the D-GL heterostructures for THz/IR lasers and photodetectors (PDs) [2-4]. The structures of these devices are schematically shown in Figs. 1(a) and 2. The main element of both the lasers and PDs under consideration is a D-GL core-shell heterostructure with the independently contacted GLs separated by the thin transparent tunnel-barrier layer. The bias voltage V applied between the GL's contacts induces the electron and hole gases in the opposing GLs. The electron and hole densities in GLs are also controlled by the gate voltage Vg. The outer gate-stack structures at both sides of the D-GL core shell also serve as the metal-metal (MM) waveguide, as shown in Fig. 1(a). The voltage-dependent band-offset energy (designated with 'Δ' in Fig. 3) between the Dirac points of the GLs and the depolarization shift determine the energies of the photons emitted (in the lasers) or absorbed (in the PDs) in the resonant-tunneling inter-GL transitions. For comparison, in the intra-GL transition-type device implementation shown in Fig. 1(b), both GLs are electrically contacted with both electrodes, so that electrons and holes are injected laterally to the GLs from the side contacts. In this device, both GLs form the lateral p-i-n junctions. Figs. 3(a)-(c) show the radiative inter-GL transitions in D-GL laser/PD structures and intra-GL laser structures, respectively.

Original languageEnglish
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Print)9781479954056
Publication statusPublished - 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: 2014 Jun 222014 Jun 25

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other72nd Device Research Conference, DRC 2014
Country/TerritoryUnited States
CitySanta Barbara, CA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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