Terahertz emission from an asymmetric dual-grating-gate InGaAs high-electron-mobility transistor stimulated by plasmonic boom instability

Tomotaka Hosotani; Takayuki Watanabe; Akira Satou; Taiichi Otsuji

doi:10.1109/IRMMW-THz.2019.8874584

Terahertz emission from an asymmetric dual-grating-gate InGaAs high-electron-mobility transistor stimulated by plasmonic boom instability

Tomotaka Hosotani, Takayuki Watanabe, Akira Satou, Taiichi Otsuji

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Asymmetric dual-grating-gate InGaAs high-electron-mobility transistors (ADGG-HEMTs) are studied as plasmonic terahertz (THz) emitters. We experimentally observed THz emission from a fabricated device at 110K. The spectra showed a broadband resonant emission under low d.c. channel currents reflecting radiation decay of thermally excited plasmons. With increasing the current and longitudinal electric field the emission was enhanced in a narrower spectral range suggesting promotion of plasmonic instability. Its threshold behavior suggests the occurrence of plasmonic-boom-type instability.

Original language	English
Title of host publication	IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538682852
DOIs	https://doi.org/10.1109/IRMMW-THz.2019.8874584
Publication status	Published - 2019 Sept
Event	44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, France Duration: 2019 Sept 1 → 2019 Sept 6

Publication series

Name	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume	2019-September
ISSN (Print)	2162-2027
ISSN (Electronic)	2162-2035

Conference

Conference	44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
Country/Territory	France
City	Paris
Period	19/9/1 → 19/9/6

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1109/IRMMW-THz.2019.8874584

Cite this

Hosotani, T., Watanabe, T., Satou, A., & Otsuji, T. (2019). Terahertz emission from an asymmetric dual-grating-gate InGaAs high-electron-mobility transistor stimulated by plasmonic boom instability. In IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves [8874584] (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2019-September). IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz.2019.8874584

Terahertz emission from an asymmetric dual-grating-gate InGaAs high-electron-mobility transistor stimulated by plasmonic boom instability. / Hosotani, Tomotaka; Watanabe, Takayuki ; Satou, Akira et al.
IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves. IEEE Computer Society, 2019. 8874584 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2019-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hosotani, T, Watanabe, T , Satou, A & Otsuji, T 2019, Terahertz emission from an asymmetric dual-grating-gate InGaAs high-electron-mobility transistor stimulated by plasmonic boom instability. in IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves., 8874584, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2019-September, IEEE Computer Society, 44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019, Paris, France, 19/9/1. https://doi.org/10.1109/IRMMW-THz.2019.8874584

Hosotani T, Watanabe T , Satou A , Otsuji T. Terahertz emission from an asymmetric dual-grating-gate InGaAs high-electron-mobility transistor stimulated by plasmonic boom instability. In IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves. IEEE Computer Society. 2019. 8874584. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). doi: 10.1109/IRMMW-THz.2019.8874584

Hosotani, Tomotaka ; Watanabe, Takayuki ; Satou, Akira et al. / Terahertz emission from an asymmetric dual-grating-gate InGaAs high-electron-mobility transistor stimulated by plasmonic boom instability. IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves. IEEE Computer Society, 2019. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

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abstract = "Asymmetric dual-grating-gate InGaAs high-electron-mobility transistors (ADGG-HEMTs) are studied as plasmonic terahertz (THz) emitters. We experimentally observed THz emission from a fabricated device at 110K. The spectra showed a broadband resonant emission under low d.c. channel currents reflecting radiation decay of thermally excited plasmons. With increasing the current and longitudinal electric field the emission was enhanced in a narrower spectral range suggesting promotion of plasmonic instability. Its threshold behavior suggests the occurrence of plasmonic-boom-type instability.",

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AB - Asymmetric dual-grating-gate InGaAs high-electron-mobility transistors (ADGG-HEMTs) are studied as plasmonic terahertz (THz) emitters. We experimentally observed THz emission from a fabricated device at 110K. The spectra showed a broadband resonant emission under low d.c. channel currents reflecting radiation decay of thermally excited plasmons. With increasing the current and longitudinal electric field the emission was enhanced in a narrower spectral range suggesting promotion of plasmonic instability. Its threshold behavior suggests the occurrence of plasmonic-boom-type instability.

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Terahertz emission from an asymmetric dual-grating-gate InGaAs high-electron-mobility transistor stimulated by plasmonic boom instability

Abstract

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