Terahertz emission from InGaP/InGaAs/GaAs double grating gate HEMT device

Y. M. Meziani; M. Hanabe; A. Koizumi; T. Otsuji; E. Sano

doi:10.1364/otst.2007.md12

Terahertz emission from InGaP/InGaAs/GaAs double grating gate HEMT device

Y. M. Meziani, M. Hanabe, A. Koizumi, T. Otsuji, E. Sano

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We observed an emission of terahertz radiation from our new grating gate emitter. It was subjected to CW laser at room temperature. We report on the tuning of the resonance frequency by the gate bias.

Original language	English
Title of host publication	Optical Terahertz Science and Technology, OTST 2007
Publisher	Optical Society of America (OSA)
ISBN (Print)	1557528373, 9781557528377
DOIs	https://doi.org/10.1364/otst.2007.md12
Publication status	Published - 2007
Event	Optical Terahertz Science and Technology, OTST 2007 - Orlando, FL, United States Duration: 2007 Mar 18 → 2007 Mar 18

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Optical Terahertz Science and Technology, OTST 2007
Country/Territory	United States
City	Orlando, FL
Period	07/3/18 → 07/3/18

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

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10.1364/otst.2007.md12

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Meziani, YM, Hanabe, M, Koizumi, A, Otsuji, T & Sano, E 2007, Terahertz emission from InGaP/InGaAs/GaAs double grating gate HEMT device. in Optical Terahertz Science and Technology, OTST 2007. Optics InfoBase Conference Papers, Optical Society of America (OSA), Optical Terahertz Science and Technology, OTST 2007, Orlando, FL, United States, 07/3/18. https://doi.org/10.1364/otst.2007.md12

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title = "Terahertz emission from InGaP/InGaAs/GaAs double grating gate HEMT device",

abstract = "We observed an emission of terahertz radiation from our new grating gate emitter. It was subjected to CW laser at room temperature. We report on the tuning of the resonance frequency by the gate bias.",

author = "Meziani, {Y. M.} and M. Hanabe and A. Koizumi and T. Otsuji and E. Sano",

year = "2007",

doi = "10.1364/otst.2007.md12",

language = "English",

isbn = "1557528373",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America (OSA)",

booktitle = "Optical Terahertz Science and Technology, OTST 2007",

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TY - GEN

T1 - Terahertz emission from InGaP/InGaAs/GaAs double grating gate HEMT device

AU - Meziani, Y. M.

AU - Hanabe, M.

AU - Koizumi, A.

AU - Otsuji, T.

AU - Sano, E.

PY - 2007

Y1 - 2007

N2 - We observed an emission of terahertz radiation from our new grating gate emitter. It was subjected to CW laser at room temperature. We report on the tuning of the resonance frequency by the gate bias.

AB - We observed an emission of terahertz radiation from our new grating gate emitter. It was subjected to CW laser at room temperature. We report on the tuning of the resonance frequency by the gate bias.

UR - http://www.scopus.com/inward/record.url?scp=85088759636&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85088759636&partnerID=8YFLogxK

U2 - 10.1364/otst.2007.md12

DO - 10.1364/otst.2007.md12

M3 - Conference contribution

AN - SCOPUS:85088759636

SN - 1557528373

SN - 9781557528377

T3 - Optics InfoBase Conference Papers

BT - Optical Terahertz Science and Technology, OTST 2007

PB - Optical Society of America (OSA)

T2 - Optical Terahertz Science and Technology, OTST 2007

Y2 - 18 March 2007 through 18 March 2007

ER -

Terahertz emission from InGaP/InGaAs/GaAs double grating gate HEMT device

Abstract

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