TY - JOUR
T1 - Terahertz emission in an InGaAs-based dual-grating-gate high-electron-mobility transistor plasmonic photomixer
AU - Hosotani, Tomotaka
AU - Satou, Akira
AU - Otsuji, Taiichi
N1 - Publisher Copyright:
© 2021 Institute of Physics Publishing. All rights reserved.
PY - 2021/5
Y1 - 2021/5
N2 - We report on terahertz (THz) emission from an InGaAs-based DC-current-driven dual-grating-gate high-electron-mobility transistor excited by photomixed dual continuous-wave-infrared (dual-CW-IR) laser irradiation. The difference frequency (δf ) of the dual-CW-IR laser beams was set around the THz plasmon mode frequencies at different bias conditions. The radiation spectra from the device observed at 120 K showed distinctive emissions beyond the black-body radiation, which were promoted by δf-dependent coherent plasmons. The results suggest the occurrence of plasmonic boom instability stimulated by the DC current flow in the 2D channel under pertinent DC bias voltages.
AB - We report on terahertz (THz) emission from an InGaAs-based DC-current-driven dual-grating-gate high-electron-mobility transistor excited by photomixed dual continuous-wave-infrared (dual-CW-IR) laser irradiation. The difference frequency (δf ) of the dual-CW-IR laser beams was set around the THz plasmon mode frequencies at different bias conditions. The radiation spectra from the device observed at 120 K showed distinctive emissions beyond the black-body radiation, which were promoted by δf-dependent coherent plasmons. The results suggest the occurrence of plasmonic boom instability stimulated by the DC current flow in the 2D channel under pertinent DC bias voltages.
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U2 - 10.35848/1882-0786/abf02a
DO - 10.35848/1882-0786/abf02a
M3 - Article
AN - SCOPUS:85104826951
SN - 1882-0778
VL - 14
JO - Applied Physics Express
JF - Applied Physics Express
IS - 5
M1 - 051001
ER -