Terahertz imaging with GaAs field-effect transistors

A. Lisauskas; W. Von Spiegel; S. Boubanga-Tombet; A. El Fatimy; D. Coquillat; F. Teppe; N. Dyakonova; W. Knap; H. G. Roskos

doi:10.1049/el:20080172

Terahertz imaging with GaAs field-effect transistors

A. Lisauskas, W. Von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, H. G. Roskos

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

Imaging at 0.6THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.

Original language	English
Pages (from-to)	408-409
Number of pages	2
Journal	Electronics Letters
Volume	44
Issue number	6
DOIs	https://doi.org/10.1049/el:20080172
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20080172

Cite this

@article{9111b43cc8f6403ebab723bd7b6a8ebe,

title = "Terahertz imaging with GaAs field-effect transistors",

abstract = "Imaging at 0.6THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.",

author = "A. Lisauskas and {Von Spiegel}, W. and S. Boubanga-Tombet and {El Fatimy}, A. and D. Coquillat and F. Teppe and N. Dyakonova and W. Knap and Roskos, {H. G.}",

year = "2008",

doi = "10.1049/el:20080172",

language = "English",

volume = "44",

pages = "408--409",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "6",

}

TY - JOUR

T1 - Terahertz imaging with GaAs field-effect transistors

AU - Lisauskas, A.

AU - Von Spiegel, W.

AU - Boubanga-Tombet, S.

AU - El Fatimy, A.

AU - Coquillat, D.

AU - Teppe, F.

AU - Dyakonova, N.

AU - Knap, W.

AU - Roskos, H. G.

PY - 2008

Y1 - 2008

N2 - Imaging at 0.6THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.

AB - Imaging at 0.6THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.

UR - http://www.scopus.com/inward/record.url?scp=40749137811&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40749137811&partnerID=8YFLogxK

U2 - 10.1049/el:20080172

DO - 10.1049/el:20080172

M3 - Article

AN - SCOPUS:40749137811

SN - 0013-5194

VL - 44

SP - 408

EP - 409

JO - Electronics Letters

JF - Electronics Letters

IS - 6

ER -

Terahertz imaging with GaAs field-effect transistors

Abstract

ASJC Scopus subject areas

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