Terahertz imaging with GaAs field-effect transistors

A. Lisauskas, W. Von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, H. G. Roskos

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)


Imaging at 0.6THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.

Original languageEnglish
Pages (from-to)408-409
Number of pages2
JournalElectronics Letters
Issue number6
Publication statusPublished - 2008
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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