Terahertz imaging with InP high-electron-mobility transistors

Takayuki Watanabe, Keisuke Akagawa, Yudai Tanimoto, Dominique Coquillat, Wojciech Knap, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)


In this work, the performance of InP-based HEMTs as a THz detector was experimentally studied. The nature of the THz rectification by the two-dimensional plasmons in which the DC drain current variation ΔI d becomes maximal around the threshold voltage was observed. Based on the imaging measurement, it was confirmed that our HEMTs device can work for sensitive THz imaging at 0.3 THz. The directivity of the detector was characterized with the maximum responsivity of 26.1 V/W at θ = 160 degrees.

Original languageEnglish
Title of host publicationTerahertz Physics, Devices, and Systems V
Subtitle of host publicationAdvance Applications in Industry and Defense
Publication statusPublished - 2011
EventTerahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense - Orlando, FL, United States
Duration: 2011 Apr 252011 Apr 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceTerahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
Country/TerritoryUnited States
CityOrlando, FL


  • Detection
  • High electron mobility transistor
  • Imaging
  • Plasmon
  • Terahertz


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